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Structure and Morphology of Tetracene Thin Films on Hydrogen-Terminated Si(001)

Published online by Cambridge University Press:  26 February 2011

X. R. Qin ,
A. Tersigni ,
J. Shi  and
D. T. Jiang
X. R. Qin
Affiliation:
[email protected], University of Guelph, Department of Physics, 50 Stone Road East, Guelph, N1G 2W1, Canada, (519)824-4120 ext 53675
A. Tersigni
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
J. Shi
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
D. T. Jiang
Affiliation:
[email protected], University of Guelph, Department of Physics, Guelph, Ontario, N1G 2W1, Canada
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Abstract

Scanning tunneling microscopy (STM), atomic force microscopy (AFM) and near-edge x-ray absorption fine structure (NEXAFS) have been used to study the structure of tetracene films on hydrogen-passivated Si(001). A distinct growth morphology change that occurs around a few monolayers of film thickness was characterized. This coverage-dependent film structural phase transition leads to a molecularly ordered film structure commensurate with the crystalline substrate.

Keywords

organicthin filmscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S12-25
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Forrest, S. R., Chem. Rev. 97, 1793 (1997)Google Scholar
2. Schreiber, F., Phys. Stat. Sol. 201, 1037 (2004)Google Scholar
3. Witte, G. and Wöll, Ch., J. Mater. Res., 19, 1889 (2004)Google Scholar
4. Campbell, R. B. and Robertson, J. M., Acta Cryst. 15, 289 (1962); J. M. Robertson, V.C. Sinclair and J. Trotter, Acta Cryst. 14, 697 (1961)Google Scholar
5. Gundlach, D. J., Nichols, J. A., Zhou, L., and Jackson, T. N., Appl. Phys. Lett. 80, 2925 (2002)Google Scholar
6. Hepp, A., Heil, H., Weise, W., Ahles, M., Schmechel, R., and Seggern, H. von, Phys. Rev. Lett. 91, 157406 (2003)Google Scholar
7. Cicoira, F., Santato, C., Dinelli, F., Murgia, M., Loi, M. A., Biscarini, F., Zamboni, R., Heremans, P., and Muccini, M., Adv. Funt. Mater. 15, 375 (2005)Google Scholar
8. Milita, S., Servidori, M., Cicoira, F., Santato, C., and Pitteri, A., Nucl. Instrum. and Method in Phys. Res. B, 246, 101(2006).Google Scholar
9. Heringdorf, F.-J. Meyer zu, Reuter, M. C., and Tromp, R. M., Nature 412, 517 (2001).Google Scholar
10. Ruiz, R., Nickel, B., Koch, N., Feldman, L. C., Haglund, R. F., Kahn, A., and Scoles, G., Phys. Rev. B 67, 125406 (2003)Google Scholar
11. Beernink, G., Strunskus, T., Witte, G., and Wöll, Ch., Appl. Phys. Lett. 85, 398 (2004); S. Lukas, S. Söhnchen, G. Witte, and Ch. Wöll, ChemPhysChem 5, 266 (2004).Google Scholar
12. Shi, J. and Qin, X. R., Phys. Rev. B 73, 121303(R) (2006)Google Scholar
13. Tersigni, A., Shi, J., Jiang, D. T., and Qin, X. R., Phys. Rev. B 74, 205326 (2006)Google Scholar
14. Stöhr, J., NEXAFS Spectroscopy, Surface Science Series, Springer, Second Printing 2003.Google Scholar