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Structure and Electrical Properties of Atomic-scale In-Bi Nanowire Arrays

Published online by Cambridge University Press:  01 February 2011

James Hugh Gervase Owen ,
Osamu Kubo  and
David Bowler
James Hugh Gervase Owen
Affiliation:
[email protected], Université de Genève, Dept. de Physique de la Matière Condensée, 24 Quai Ernest Ansermet,, Genève, 1211, Switzerland, +41-22-379 35 47
Osamu Kubo
Affiliation:
[email protected], National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
David Bowler
Affiliation:
[email protected], University College London, London Centre for Nanotechnology and Dept. of Physics and Astronomy, Gower St,, London, WC1E 6BT, United Kingdom
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Abstract

The 1-nm-wide Bi nanoline has been proposed as a possible template for the growth of very-high-density arrays of atomic-scale nanowires, grown epitaxially on the technologically important Si(001) surface. Indium reacts with the Bi dimers, forming a unique zigzag atomic chain structure. Simulations of the appearance in STM of the lowest-energy isomer of this structure match experimental filled-states images. Calculation of the LDOS for the single-layer islands, finds that the nanowires are semiconducting, with a band gap smaller than that of the substrate, in good agreement with STS. A delocalised LUMO state is created, which may provide a conduction pathway along the nanowire. We have performed dual-probe STM conduction measurements along the In-Bi nanowires to test this prediction.

Keywords

nanostructurescanning tunneling microscopy (STM)epitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O03-06
Copyright
Copyright © Materials Research Society 2008

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References

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