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The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

Published online by Cambridge University Press:  28 February 2011

R. Martins ,
M. Vieira ,
I. Ferreira  and
E. Fortunato
R. Martins
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
M. Vieira
Affiliation:
CEMOP/UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal.
I. Ferreira
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
E. Fortunato
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
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Abstract

This work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 787
Copyright
Copyright © Materials Research Society 1995

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References

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