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Structural Studies of ZnO Calcined with Transition Metal Oxides

Published online by Cambridge University Press:  01 February 2011

Lori Noice ,
Bjoern Seipel ,
Georg Grathoff ,
Amita Gupta ,
Peter Moeck  and
V. K. Rao
Lori Noice
Affiliation:
[email protected], Portland State University, Physics, P.O. Box 751, Portland, OR, 97207-0751, United States, 503-725-4248
Bjoern Seipel
Affiliation:
[email protected], Portland State University, Department of Physics, United States
Georg Grathoff
Affiliation:
[email protected], Portland State University, Department of Geology
Amita Gupta
Affiliation:
[email protected], The Royal Institute of Technology, Department of Material Science, Sweden
Peter Moeck
Affiliation:
[email protected], Portland State University, Department of Physics, United States
V. K. Rao
Affiliation:
[email protected], The Royal Institute of Technology, Department of Material Science, Sweden
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Abstract

Powder X-ray diffraction analyses of Mn-and Cu-doped ZnO powders calcined at 500˚C, show shifts in the wurtzite type semiconductor's lattice constants and unit cell volume which correspond to the nominal concentrations of transition metal dopants. Marked reductions in the a-lattice constant and unit cell volume for a small concentration of Cu dopants, which is not maintained upon increased Cu concentration, suggest a change in the copper ion hybridization state due to the dopant concentration. In all the samples, only ZnO and CuO phases were detected, aiding the ascertainment of any ferromagnetic response from the samples as arising from the formation of a true dilute magnetic semiconductor.

Keywords

spintronicstructuralx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-10
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Sluiter, M. H. F. et al. “First principles based design and experimental evidence for a ZnO-based ferromagnet at room temperature.” Physical Review Letters 94(18): 187204 1–3 (2005).Google Scholar
2. Dietl, T., H. O., , Matsukura, F., Cibert, J., Ferrand, D. “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors.” Science 287(5455): 1019–1022 (2000).Google Scholar
3. Fukumura, T., et al. “Magnetic Oxide Semiconductors.” Semicond. Sci. Technol. 20: S103-S111 (2005).Google Scholar
4. Chambers, S. A. and Farrow, R. F. “New possibilities for ferromagnetic semiconductors.” MRS Bulletin 28(10): 729–733 (2003).Google Scholar
5. Feng, X. “Electronic structures and ferromagnetism of Cu- and Mn-doped ZnO.” Journal of Physics: Condensed Matter 16: 4251–4259 (2004).Google Scholar
6. Kittilstved, K. R. et al. “Chemical manipulation of High-T-C ferromagnetism in ZnO diluted magnetic semiconductors.” Physical Review Letters 94(14): 147209 1–3 (2005).Google Scholar
7. Han, S. J. et al. “A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu.” Appl. Phys. Lett. 81(22): 4212–4214 (2002).Google Scholar
8. Sharma, P. et al. “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO.” Nature Materials 2(10): 673–677 (2003).10.1038/nmat984Google Scholar
9. Buchholz, D. B. and Chang, R. P. H. “Room-temperature ferromagnetism n Cu-doped ZnO thin films.” Applied Physics Letters 87(8): 082504 1–3 (2005).10.1063/1.2032588Google Scholar
10. Jin, Z. W. et al. “High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties.” Applied Physics Letters 78(24): 3824–3826 (2001).Google Scholar
11. Kittilstved, K. R. and Gamelin, D. R. “Activation of high-T-c ferromagnetism in Mn2+-doped ZnO using amines.” Journal of the American Chemical Society 127(15): 5292–5293 (2005).Google Scholar
12. Sharma, P. et al. “Room temperature spintronicmaterial—Mn-doped ZnO revisited.” Journal of Magnetism and Magnetic Materials 282: 115–121(2004).10.1016/j.jmmm.2004.04.028Google Scholar
13. Rao, C. N. R. and Deepak, F. L. “Absence of ferromagnetism in Mn- and Co-doped ZnO.” Journal of Materials Chemistry 15(5): 573–578 (2005).10.1039/b412993hGoogle Scholar
14. International Centre for Diffraction Data, 12 Campus Boulevard, Newtown Square, PA 19073–3273Google Scholar
15. http://database.iem.ac.ru/mincryst/ Google Scholar
16. Poly Software International, P.O. Box 60, Pearl River, NY 10965, www.polysoftware.com Google Scholar
17. Von Dreele, R.B., Larson, A.C., www.ncnr.nist.gov/programs/crystallography/software/gsas.html Copyright Regents of University of California, 2001 Google Scholar
18. WebElements™ Periodic table (professional edition) http://www.webelements.com/ Google Scholar
19. Brumage, W. H. et al. “Temperature-dependent paramagnetic susceptibilities of Cu2+ and Co2+ as dilute impurities in ZnO.” Physical Review B 6310(10): 104411 1–4 (2001).Google Scholar