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Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)

Published online by Cambridge University Press:  21 March 2011

C. D. Lee ,
R. M. Feenstra ,
O. Shigiltchoff ,
R. P. Devatya  and
W. J. Choyke
C. D. Lee
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
R. M. Feenstra
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
O. Shigiltchoff
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
R. P. Devatya
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
W. J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
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Abstract

Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on vicinal 6H-SiC(0001) substrates with [1 1 00] and [11 2 0] miscut directions. The hydrogen-etched substrates display straight, or chevron shaped steps respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.40.1
Copyright
Copyright © Materials Research Society 2002

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