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Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

Published online by Cambridge University Press:  01 February 2011

Xinghua Wang ,
Sarjoosing Goolaup ,
Peng Ren  and
Wen Siang Lew
Xinghua Wang
Affiliation:
[email protected], Nanyang technological university, Singapore, Singapore
Sarjoosing Goolaup
Affiliation:
[email protected], Nanyang technological University, Singapore, Singapore
Peng Ren
Affiliation:
[email protected], Nanyang Technological University, Singapore, Singapore
Wen Siang Lew
Affiliation:
[email protected], Nanyang Technological University, Singapore, Singapore
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Abstract

Thin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

Keywords

electrical propertiesmagneticsputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G03-02
Copyright
Copyright © Materials Research Society 2010

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