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Structural Control of Epitaxially Grown Sputtered Perovskite Thin Films

Published online by Cambridge University Press:  15 February 2011

Kiyotaka Wasa ,
Toshifumi Sato ,
Hideaki Adachi ,
Kentaro Setsune ,
S. Trolier-McKinstry  and
Darrell G. Schlom
Kiyotaka Wasa
Affiliation:
Matsushita Electric, 3–4, Hikaridai, Seikacho, Kyoto, 619–02 Japan
Toshifumi Sato
Affiliation:
Matsushita Electric, 3–4, Hikaridai, Seikacho, Kyoto, 619–02 Japan
Hideaki Adachi
Affiliation:
Matsushita Electric, 3–4, Hikaridai, Seikacho, Kyoto, 619–02 Japan
Kentaro Setsune
Affiliation:
Matsushita Electric, 3–4, Hikaridai, Seikacho, Kyoto, 619–02 Japan
S. Trolier-McKinstry
Affiliation:
Pennsylvania State Univ.University Park, PA 16802, U.S.A.
Darrell G. Schlom
Affiliation:
Pennsylvania State Univ.University Park, PA 16802, U.S.A.
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Abstract

Thin films of perovskite Pb–Ti–O3 families were heteroepitaxially grown by sputtering on (0001)sapphire and/or (001)SrTiO (ST). These epitaxial films contained microstructures, although X–ray diffraction analysis suggested formation of single crystal phase with three dimentional crystal orientation. Their microstructures were studied by the electron microscopy, atomic force microscopy, and spectroscopic ellipsometry so as to find factors which influence the formation of the microstructure. It was found that the orientation of the substrate surface and the chemical composition of adatoms during initial film growth strongly affected the formation of the microstructures. Sputtered PbTiO3 (PT) thin films under a stoichiometric condition on a miscut(001) ST(miscut 1.7 degree) realized the growth of continuous single crystal thin films of 10–100nm thick with extremely smooth surface with surface roughness less than 3nm. Deposition on a miscut substrate under a stoichiometric condition is essential to make continuous thin films of perovskite of single crystal phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 151
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Wasa, K., Sato, T., Tabata, K., Adachi, H., Yabuuchi, Y., and Setsune, K.: J. Mater. Res., 9 (1994) 2959.Google Scholar
2. Wasa, K., Adachi, H., and Kitabatake, M.: Ferroelectrics, 151 (1994) 1.Google Scholar
3. Wasa, K., Sato, T., Tabata, K., Adachi, H., and Setsune, K.: Appl. Phys. Commun., 13 (1994) 205.Google Scholar
4. Roy, R. (private communication).Google Scholar
5. Eom, C.B., Cava, R.J., Fleming, R.M., Phillips, Julia M., Dover, R.B. van, Marshall, J.H., Hsu, J.W.P., Krajewski, J.J., and Peck, W.F. Jr,.: Science, 258 (1992) 1766.Google Scholar
6. Wasa, K., Sato, T., and Tabata, K.: 1994 MRS Fall Meeting, Proc.vol.361 (1994, Boston) p.105. T. Sato, K. Wasa, K. Tabata, H. Adachi, Y. Ichikawa, and K. Setsune: J. Vac. Sci. Technol. A 13(3), May/June (1995).Google Scholar
7. Wasa, K. and Hayakawa, S.:Handbook of Sputter Deposition Technology, Noyes New Jersey, 1991, p. 175. K. Wasa, H. Adachi, and M. Kitabatake: Ferroelectrics, 137 (1992) 343.Google Scholar
8. Wasa, K., Sato, T., Adachi, H., Setsune, K., and Trolier-McKinstry, S.: Proc.of the 3rd ISSP(1995, Tokyo) p.83.Google Scholar
9. Rossetti, G.A. Jr,. and Cross, L., and Kushida, K.: Appl. Phys. Lett., 59 (1991) 2524.Google Scholar
10. Kwak, B.S., Erbil, A., Wilkens, B.J., Budai, J.D., Chisholm, M.F., and Boatner, L.A.: Phys. Rev. Lett., 68 (1992) 3733.Google Scholar
11. Trolier-McKinstry, S., Hu, H., Krupanidhi, S.B., Chindaudom, P., Vedam, K., and Newnham, R.E.: Thin Soid Films, 230 (1993) 15.Google Scholar
12. Speck, J.S. and Pompe, : J. Appl. Phys, 76 (1994) 466. J.S. Speck, A. Seifert, W. Pompe, and R. Ramesh: J. Appl. Phys., 76 (1994) 477.Google Scholar
13. Burton, W.K., Cabera, N., and Frank, F.C.: Philos. Trans. R. Soc. London A243 (1951) 299.Google Scholar
14. Kimoto, T. and Matsunami, H.: J. Appl. Phys., 75 (1994) 850.Google Scholar
15. Wasa, K., Haneda, Y., Sato, T., Adachi, H., Hayashi, S., and Setsune, K.: Jpn. J. Appl. Phys., 34 (1995) 5132.Google Scholar