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Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates

Published online by Cambridge University Press:  13 June 2012

Mariana A. Fraga ,
Humber Furlan ,
Rodrigo S. Pessoa  and
Luiz A. Rasia
Mariana A. Fraga
Affiliation:
Institute for Advanced Studies, Department of Aerospace Science and Technology, 12228-001, S. J. dos Campos, Brazil Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil
Humber Furlan
Affiliation:
Faculty of Technology of São Paulo, Praça Cel. Fernando Prestes, 30, São Paulo –SP, 01124-060, Brazil
Rodrigo S. Pessoa
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil
Luiz A. Rasia
Affiliation:
Regional University of Northwest Rio Grande do Sul State, Ijui- RS, 98700-000, Brazil
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Abstract

Amorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron sputtering technique. Profilometry, four-point probe method, Rutherford backscattering spectroscopy (RBS) and Fourier transform infrared (FTIR) were employed to characterize the as-deposited SiC thin films. Test structures have been developed to investigate the piezoresistive properties. These structures consist of SiC thin-film resistors on AlN/Si substrates defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. Gauge factor (GF) and temperature coefficient of resistance (TCR) measurements have been performed and demonstrated the potential of these resistors to be used as sensing elements in devices for high temperature application.

Keywords

amorphousphysical vapor deposition (PVD)piezoresponse
Type
Research Article
Information
MRS Online Proceedings Library Archive , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-11
Copyright
Copyright © Materials Research Society 2012

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References

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