Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T18:05:21.046Z Has data issue: false hasContentIssue false

Structural and Ferroelectric Properties of Bi4-xNixTi3O12 Thin Films by Sol-Gel Process

Published online by Cambridge University Press:  26 February 2011

Ricardo Melgarejo
Affiliation:
[email protected], University of Puerto Rico in Cayey, Physics, 205, Av. Antonio Barcelo, Cayey, 00736, Puerto Rico, 1-787-244-4626, 1-787-832-1135
Maharaj S Tomar
Affiliation:
[email protected], University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Rahul Singhal
Affiliation:
[email protected], University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Ram S Katiyar
Affiliation:
[email protected], University of Puerto Rico, Physics, P.O. Box 23343, San Juan, 00931, Puerto Rico
Get access

Abstract

Nickel-substituted Bi4Ti3O12 (i.e., Bi4-xNixTi3O12) were synthesized by sol-gel process for different compositions. Thin films were deposited on Pt (i.e., Pt/TiO2/SiO2/Si) substrate by spin coating. Materials were characterized by x-ray diffraction and Raman spectroscopy. This study indicates that the material makes a solid solution for the compositions: x = 0.00, 0.05, 0.10, 0.15, 0.20, and 0.30, where a Ni ion replaces the Bi site. The prominent effect of Ni substitution was observed in low-frequency Raman modes. Sol-gel derived thin films of Bi4-xNixTi3O12 on a Pt substrate and post annealed at 700°C were tested for ferroelectric response which showed high remnant polarization (Pr = 22 μC/cm2 for x = 0.15). The leakage current (less then 10−7 A/cm2) at low field was observed in the film with composition x = 0.15 .The polarization of the BNiT (x = 0.15) film decreased to 83% of the initial value after 1×109 switching cycles These results indicate the potential application of Ni substituted bismuth titanate films in non-volatile ferroelectric memories.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chon, U., Jang, H. M., King, M. G., and Chang, C.H., Phys Rev. Lett. 89, 0876011 (2002).Google Scholar
2. Tomar, M.S., Melgarejo, R.E., Hidalgo, A., Majumder, S.B., and Katiyar, R.S., Appl. Phys. Lett. 83, 341 (2003).Google Scholar
3. Graves, P.R., Hua, G., Myhra, S., anda Thompson, J. G., J. Solid State Chem. 144, 112 (1995).Google Scholar
4. Kojima, S., Imaizumi, R., Hamazaki, s., and Takaahige, M., Jpn. J. Appl. Phys., Part 1, 33, 5559 (19994).Google Scholar
5. Osada, M., Tada, M., Kakihama, M., Watanabe, T., and Funakubo, H., Jpn. J. Appl. Phys. Part 1, 40, 5572 (2001).Google Scholar
6. Melgarejo, R.E., Tomar, M.S., Dobal, P.S., and Katiyar, R. S., J. Mater. Res. 15, 1661 (2000).Google Scholar