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Structural and Electronic Properties of SiCl4-based Microcrystalline Silicon Films

Published online by Cambridge University Press:  21 March 2011

Wolfhard Beyer ,
Reinhard Carius ,
Michael Lejeune  and
Uwe Zastrow
Wolfhard Beyer
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
Reinhard Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
Michael Lejeune
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
Uwe Zastrow
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

Structural and electronic properties of SiCl4-based microcrystalline silicon films were studied. A rather dense (non-porous) material structure is obtained near the transition to amorphous material, in particular at substrate temperatures of 250°C and above. Boron doping results in very high conductivity values while for phosphorus doping only lower values are reached. This latter effect is attributed to a different microstructure with lower crystalline fraction, higher hydrogen and chlorine content and increased porosity in highly phosphorus- doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.26
Copyright
Copyright © Materials Research Society 2004

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References

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