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Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. Ch. Garcia ,
J. P. Hirtz ,
P. Maurel ,
H. J. Von Bardeleben  and
J. C. Bourgoin
J. Ch. Garcia
Affiliation:
THOMSON CSF Laboratoire Central de Recherches, Domaine de corbeville 91404 Orsay FRANCE
J. P. Hirtz
Affiliation:
THOMSON CSF Laboratoire Central de Recherches, Domaine de corbeville 91404 Orsay FRANCE
P. Maurel
Affiliation:
THOMSON CSF Laboratoire Central de Recherches, Domaine de corbeville 91404 Orsay FRANCE
H. J. Von Bardeleben
Affiliation:
Groupe de Physique des Solides de l' Université Paris VII, 2 place Jussieu 75221 Paris FRANCE
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l' Université Paris VII, 2 place Jussieu 75221 Paris FRANCE
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Abstract

The low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam epitaxy. The low temperature growth of InP induces a strong group V stoechiometric deviation (of the order of +1%). On the other hand, Secondary Ion Mass Spectrometry reveals high levels of hydrogen ranging from 3.1018 to 3.1019 cm−3 depending on growth temperature. Undoped layers are found to be resistive without any post annealing. Annealing experiments above 250°C lead to conductive layers suggesting a passivation effect of both shallow donors and acceptors by hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 277
Copyright
Copyright © Materials Research Society 1992

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References

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