Hostname: page-component-669899f699-tpknm Total loading time: 0 Render date: 2025-04-30T03:15:34.414Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering

Published online by Cambridge University Press:  15 February 2011

P.K. Hucknall ,
S. Sugden ,
C.J. Sofield ,
T.C.Q Noakes  and
C.F. Mcconville
P.K. Hucknall
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
S. Sugden
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
C.J. Sofield
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
T.C.Q Noakes
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL., UK
C.F. Mcconville
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL., UK
Get access

Abstract

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon-silicon/germanium (Si/Sil-xGex) hetero-structure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapour deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Sil-xGex can be uniquely identified with a depth resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition and the results compared with conventional Rutherford back-scattering spectrometry (RBS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 229
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Veen, J.F. Van der, Surface Sci. Reports 5, 199 (1989) and reference therein.Google Scholar
2. Feldman, L.C. in “Ion Beams for Materials Analysis”, Ed. Bird, J.R. and Williams, J.S., Academic Press, London (1989).Google Scholar
3. Katayama, M., Nomura, E., Kanekama, N., Soejima, H. and Aono, M., Nucl. Instrum. and Methods B 33, 857 (1988).Google Scholar
4. Aono, M., Katayama, M. and Nomura, E., Nucl. Instrum. and Methods B 64, 29 (1992).Google Scholar
5. Rabalais, J.W., J. Vac. Sci. Technol. A 9, 1293 (1991).Google Scholar
6. Krauss, A.R., Lin, Y., Auciello, O., Lamich, G.J., Gruen, D.M., Schultz, J.A. and Chang, R.P.H., J. Vac. Sci. Technol. A 12, 1943 (1994).Google Scholar
7. Tamura, M., Saitoh, T., Sugiyma, N., Hashimoto, A., Ohkouchi, S., Ikoma, N. and Morishita, Y., Nucl. Instrum. and Methods B 85, 404 (1994).Google Scholar
8. Wang, Y., Teplov, S.V. and Rabalais, J.W., Nucl. Instrum. Methods B 90, 237 (1994).Google Scholar
9. Sugden, S., Hucknall, P.K., Sofield, C.J., Noakes, T.C.Q and McConville, C.F., (in press).Google Scholar
10. Ziegler, J.F., “Stopping and Ranges of Ions in Matter”, Pergamon Press, Oxford,1977.Google Scholar