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Stress Effects on As Activation in Si

Published online by Cambridge University Press:  01 February 2011

Chihak Ahn  and
Scott T Dunham
Chihak Ahn
Affiliation:
[email protected], University of Washington, Physics, Department of Physics, University of Washington, Seattle, WA, 98195, United States, 206-616-4450
Scott T Dunham
Affiliation:
[email protected], University of Washington, Dept. of Electrical Engineering, Seattle, WA, 98195, United States
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Abstract

We studied stress effects on As activation in silicon using density functional theory. Based on lattice expansion coefficient, we calculated formation energy change due to applied stress and plotted the stress dependence of AsmV concentration. We found that biaxial stress results in minimal impact on As activation, which is consistent with experimental observation by Sugii et al. [J. Appl. Phys. 96, 261 (2004)], who found no significant change in As activation under tensile stress.

Keywords

Asactivation analysisSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F03-17
Copyright
Copyright © Materials Research Society 2007

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