Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T22:26:59.952Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain-Relieved Reliable Lasers Grown on Si By MOCVD

Published online by Cambridge University Press:  25 February 2011

Takashi Egawa ,
Yoshiaki Hasegawa ,
Takashi Jimbo  and
Masayoshi Umeno
Takashi Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshiaki Hasegawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takashi Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Get access

Abstract

Conventional GaAs-based laser diodes grown on Si substrates suffer from rapid degradation, which results from the deteriorations of optical and electrical characteristics. Electroluminescence observation shows that the optical deterioration is caused by the formation of dark-line defects. The current-voltage (I-V) characteristic of the p-n junction is degraded with aging, and results in an ohmic-like under a higher ambient temperature and a larger forward current. The deterioration of the I-V characteristic is caused by defect-accelerated impurity diffusion because the growth of GaAs on Si substrates (GaAs/Si) involves the high dislocation density, the large tensile stress and the large amount of Si near the GaAs/Si interface. A significant improvement in reliability has been achieved in the strain-relieved AlGaAs/InGaAs laser diode on Si grown with the InGaAs intermediate layer. The stress relief by the InGaAs active layer and the reduction of the dark-line defect formation by the InGaAs intermediate layer are required to fabricate reliable GaAs-based laser diodes on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 357
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Egawa, T., Kobayashi, Y., Hayashi, Y., Soga, T., Jimbo, T., and Umeno, M., Jpn. J. Appl. Phys. 29, L1133 (1990).Google Scholar
2. Egawa, T., Tada, H., Kobayashi, Y., Soga, T., Jimbo, T., and Umeno, M., Appl. Phys. Lett. 57, 1179 (1990).Google Scholar
3. Choi, H. K., Wang, C. A., and Karam, N. H., Appl. Phys. Lett. 59, 2634 (1991).Google Scholar
4. Egawa, T., Nozaki, S., Soga, T., Jimbo, T., and Umeno, M., Appl. Phys. Lett. 58, 1265 (1991).Google Scholar
5. Shichijo, H., Lee, J. W., McLevige, W. V., and Taddiken, A. H., IEEE Electron Device Lett. EDL–8, 121 (1987).Google Scholar
6. Choi, H. K., Turner, G. W., Windhorn, T. H., and Tsaur, B.-Y., IEEE Electron Device Lett. EDL-7, 500 (1986).Google Scholar
7. Egawa, T., Jimbo, T., and Umeno, M., IEEE Photon. Technol. Lett. 4, 612 (1992).Google Scholar
8. Van der Ziel, J. P., Dupuis, R. D., Logan, R. A., and Pinzone, C. J., Appl. Phys. Lett. 51, 89 (1987).Google Scholar
9. Egawa, T., Hasegawa, Y., Jimbo, T., and Umeno, M., Jpn. J. Appl. Phys. 31, 791 (1992).Google Scholar
10. Sohn, H., Weber, E. R., Tu, J., and Wang, S. in Evolution of Thin Film and Surface Microstructure. edited by Thompson, C. V., Tsao, J. Y., and Srolovitz, D. J. (Mater. Res. Soc. Proc. 202, Pittsburgh, PA, 1991) pp. 609–613.Google Scholar
11. Freundlich, A., Grenet, J. C., Neu, G., and Stobl, G., Appl. Phys. Lett. 59, 3568 (1991).Google Scholar
12. Egawa, T., Soga, T., Jimbo, T., and Umeno, M., IEEE J. Quantum Electron. 27, 1798 (1991).Google Scholar
13. Cassidy, D. T. and Adams, C. S., IEEE J. Quantum Electron. 25, 1156 (1989).Google Scholar
14. Nozaki, S., Wu, A. T., Murray, J. J., George, T., Egawa, T., and Umeno, M., Appl. Phys. Lett. 57, 2669 (1990).Google Scholar
15. Piano, W. E., Nam, D. W., Hsieh, K. C., Guido, L. J., Kish, F. A., Sugg, A. R., and Holonyak, N. Jr, Appl. Phys. Lett. 55, 1993 (1989).Google Scholar