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Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy

Published online by Cambridge University Press:  28 February 2011

R. Hull ,
J.C. Bean ,
J.M. Bonar  and
L. Peticolas
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.M. Bonar
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. Peticolas
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The relaxation of strained epitaxial layers by the introduction of misfit dislocations is reviewed. Current theoretical and experimental understanding of the nucleation, propagation and interaction of misfit dislocations are summarized. The ramifications for applicability of strained layer epitaxy to practical device structures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 459
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Frank, F.C. and Merwe, J.H. van der, Proc. Roy. Soc. A198 (1949), 205; A198 (1949), 216; A200 (1949), 125Google Scholar
2. Merwe, J.H. Van der and Ball, C.A.B.,in Epitaxial Growth, Part b, edited by Matthews, J.W. (Academic, New York, 1975), pp. 493–528 Google Scholar
3. Matthews, J.W., J. Vac. Sci. Technol. 12 (1975), 126 and references contained thereinGoogle Scholar
4. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27 (1974), 118; 29 (1975), 273; 32 (1976), 265Google Scholar
5. Fritz, I.J., Picreaux, S.T., Dawson, L.R., Drummond, T.J., Laidig, W.D. and Anderson, N.G., Appl. Phys. Lett. 46 (1985), 967 Google Scholar
6. Gourley, P.L., Fritz, I.J. and Dawson, L.R., Appl. Phys. Lett. 52 (1988), 377 Google Scholar
7. Temkin, H., Gershoni, D.G., Chu, S.N.G., Vandenberg, J.M., Hamm, R.A. and Panish, M.B., Appl. Phys. Lett. 55 (1989), 1668 Google Scholar
8. Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., J. Vac. Sci. Technol. A2 (1984), 436 Google Scholar
9. Kohama, Y., Fukuda, Y. and Seki, M., Appl. Phys. Lett. 52 (1988), 380 Google Scholar
10. Tsao, J.Y., Dodson, B.W., Picreaux, S.T. and Cornelison, D.M., Phys. Rev. Lett. 59 (1987), 2455 Google Scholar
11. Fritz, I., Appl. Phys. Lett. 51 (1987), 1080 Google Scholar
12. Houghton, D.C., Gibbings, C.J., Tuppen, C.G., Lyons, M.H. and Halliwell, M.A.G., Appl. Phys. Lett. 56, 460 (1990)Google Scholar
13. Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51 (1987), 1325 Google Scholar
14. Hull, R., Bean, J.C. and Buescher, C., J. Appl. Phys. 66, 5837 (1989)Google Scholar
15. Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Appl. Phys. Lett. 52 (1988), 1605 Google Scholar
16. Hull, R. and Bean, J.C., J. Vac. Sci. Tech. A7 (1989), 2580 Google Scholar
17. Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Phys. Rev. B40 (1989), 1681 Google Scholar
18. Hull, R. and Bean, J.C., Appl. Phys. Lett. 54 (1989), 925 Google Scholar
19. Hull, R. and Bean, J.C., Appl. Phys. Lett. 55 (1989), 1900 Google Scholar
20. Hull, R., Bean, J.C., Eaglesham, D.J., Bonar, J.M. and Buescher, C., Thin Solid Films, 183 (1989), 117 Google Scholar
21. Hagen, W. and Strunk, H., Appl. Phys. 17 (1978), 85 Google Scholar
22. Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J. and Bean, J.C., Phil. Mag. A59 (1989), 1059 Google Scholar
23. Matthews, J.W., Blakeslee, A.E. and Mader, S., Thin Solid Films 33 (1976), 253 Google Scholar
24. Freund, L.B., Bower, A. and Ramirez, J.C., Proc. Mat. Res. Soc. 130, ed. Bravman, J.C., Nix, W.D., Barnett, D.M. and Smith, D.A. (Materials Research Society, Pittsburgh, PA, 1989), p. 139 Google Scholar
25. Fitzgerald, E.A., J. Vac. Sci. Tech. B7 (1989), 782 Google Scholar
26. Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.C., Kirchner, P.D., Pettit, G.D. and Woodall, J.M., J. Appl. Phys. 65 (1989), 2688 Google Scholar
27. Hull, R., Bean, J.C., Bonar, J.M., Higashi, G.S., Short, K.T., Temkin, H. and White, A.E., Appl. Phys. Lett. 56, 2445 (1990)Google Scholar
28. Alexander, H. and Haasen, P. in Solid State Physics, Vol. 22 (1968), p.27 Google Scholar
29. Imai, M. and Sumino, K., Phil. Mag. A47 (1983), 599 Google Scholar
30. George, A. and Rabier, J., Revue Phys. Appl. 22 (1987), 941 Google Scholar
31. Houghton, D.C. and Rowell, N.L., these proceedingsGoogle Scholar
32. Dodson, B.W., Phys. Rev. B38 (1988), 12383 Google Scholar
33. Hirth, J.P. and Lothe, J., “Theory of Dislocations” (McGraw-Hill, New York, 1968)Google Scholar
34. Seeger, A. and Schiller, P., Acta. Met. 10, 348 (1962)Google Scholar
35. Hirsch, P.B., Ourmazd, A. and Pirouz, P., Inst. Phys. Conf. Ser. No. 60 (Institute of Physics, Bristol, England, 1981), p. 29 Google Scholar
36. Gottschalk, H., Alexander, H. and Dietz, V., in Proceedings of Microscopy of Semiconducting Materials Conference, Oxford, England, April 1987 (Institute of Physics Conference Series No. 87, Institute of Physics, Bristol, England, 1987), p. 339 Google Scholar
37. Tuppen, C.G. and Gibbings, C.J., in “Silicon Molecular Beam Epitaxy”, Ed. Kasper, E. and Parker, E.H.C. (North Holland, Amsterdam, 1989)Google Scholar
38. Tuppen, C.G. and Gibbings, C.J., J. Appl. Phys., in pressGoogle Scholar
39. Kuesters, K.H., Cooman, B.C. De and Carter, C.B., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, CA Aug. 1984, ed. Kimmerling, L.C. and Parsey, J.M. Jr., (AIME, Warrendale, PA, 1985), p, 351 Google Scholar
40. Bonar, J.M., Hull, R., Malik, R.J., Ryan, R.W. and Walker, J.F., to be published in Proc. Mat. Res. Soc. 160 Google Scholar