Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-12T09:46:32.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain Measurements in Si/Si0.5Ge0.5 Superlattices by He Ion Channeling

Published online by Cambridge University Press:  28 February 2011

S. Mantl ,
E. Kasper  and
H. J. Jorke
S. Mantl
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
E. Kasper
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
H. J. Jorke
Affiliation:
AEG-Telefunken, Forschungsinstitut, D-7900 Ulm, FRG
Get access

Abstract

He ion channeling experiments have been performed on molecular beam grown Si/SiGe superlattices to determine the strain fields. Angular yield scans provide directly the tetragonal strains in the layers. In Si/Si0.5Ge0.5 superlattices grown on (100) Si only the SiGe layers are strained. Almost equal but opposite strains in the Si and SiGe layers have been found in a Si/Si0.5Ge0.5 superlattice deposited on a 230 nm thick SiO.71Ge0.29 buffer layer. Strain symmetrization yields the minimum elastic energy and thus to the most stable structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H. and Herzog, H.J., Phys. Rev. Lett. 54 (1985) 2441 Google Scholar
[2] People, R., Bn, J.C., Lang, D.V., Sergent, A.M., Störmer, H.L., Wecht, K.W., Lynch, R.T. and Baldwin, K., Appl. Phys. Lett. 45 (1984) 1231 Google Scholar
[3] Pearsall, T.P., Bevk, J., Feldmann, L.C., Bonar, J.M. and Mannaerts, J.P. Phys. Rev. Lett. 58 (1987) 729 Google Scholar
[4] Kasper, E., Herzog, H.J., Jorke, H. and Abstreiter, G., Superlattices and Microstructures (1987) in press.Google Scholar
[5] Fiory, A.T., Feldmann, L.C., Bean, J.C. and Robinson, I.K., Mat. Res. Soc. Symp. Proc. 25 (1984) 497 Google Scholar
[6] Picraux, S.T., Chu, W.K., Allen, W.R. and Ellison, J. A., Nucl. Instr. and Meth. B15 (1986) 306 Google Scholar
[7] Mantl, S., Buchal, Ch., stritzker, BC. and Saftic, B., Nucl. Instr. and Meth. B15 (1986) 314 Google Scholar
[8] Mantl, S., Poker, D.B. and Reichelt, K., Nucl. Instr. and Meth. B19/20 (1987) 677 Google Scholar
[9] Kasper, E., App. Phys. A28 (1982) 129 Google Scholar
[10] Jorke, J., Herzog, H.J. and Kibbel, H., App. Phys. Lett. 47 (1985) 511 Google Scholar
[11] Doolittle, L.R., Niuil. Instr. and Meth. B15 (1986) 277 Google Scholar
[12] Bean, J.C., Feldmann, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K. J. Vac. Sci. Technol. A2 (1984) 436 Google Scholar
[13] Murakami, M., CRC Cirtical Reviews in Solid State and Materials Science, Vol 11 (1984) 317 Google Scholar
[14] Hull, R., Bean, J.C., Cerdeira, F., Fiory, A.T. and Gibson, J.M., Appl. Phys. Lett 48 (1986) 56 Google Scholar