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Stoichiometry of GaAs nanodots on GaAs(001)

Published online by Cambridge University Press:  02 July 2015

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*Author to whom correspondence should be addressed; electronic mail: [email protected]
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Abstract

We present a strain-free, self-assembled GaAs nanodots on GaAs(001) surfaces. Nanodots are studied by atomic force microscopy and field emission scanning electron microscopy. Nanodots self-assemble on the GaAs surface when two laser pulses overlap on the surface interferentially. Their stoichiometry is characterized by energy dispersive X-ray spectroscopy in the electron microscope. For the stoichiometry study, electrons with voltages less than 5 kilovolts were used to produce the characteristic X-rays from dots in order to enhance the surface sensitivity. The stoichiometric analysis indicates that the nanodots’ relative composition ratio of Ga over As reaches to that of GaAs substrate when the dot size becomes smaller than 100 nm. The chemical analysis suggests a novel route of strain-free semiconductor nanodots.

Keywords

nanostructurerapid solidificationchemical composition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1748: Symposium II – Semiconductor Nanocrystals, Plasmonic Metal Nanoparticles, and Metal-Hybrid Structures , 2015 , mrsf14-1748-ii11-06
Copyright
Copyright © Materials Research Society 2015 

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References

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