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Stacked Boron Doped Poly-Crystalline Silicon-Germanium Layers: an Excellent MEMS Structural Material

Published online by Cambridge University Press:  01 February 2011

Gert Claes
Affiliation:
[email protected], IMEC / K.U.Leuven, CMOSDR/CTI, Kapeldreef 75, Leuven, N/A, Belgium
Gregory Van Barel
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Rita Van Hoof
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Bert Du Bois
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Maria Gromova
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Agnes Verbist
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Tom Van der Donck
Affiliation:
[email protected], K.U.Leuven, Metallurgy and Materials Engineering, Leuven, N/A, Belgium
Stefaan Decoutere
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
Jean-Pierre Celis
Affiliation:
[email protected], K.U.Leuven, Metallurgy and Materials Engineering, Leuven, N/A, Belgium
Ann Witvrouw
Affiliation:
[email protected], IMEC, Leuven, N/A, Belgium
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Abstract

In this work stacked boron doped poly-crystalline Silicon-Germanium (poly-SiGe) layers, which can be applied as structural MEMS layers, were studied. A standard 1 µm base layer, deposited at 480 ºC chuck temperature, is stacked until the required thickness (e.g. 10 x for a 10 µm thick layer). This 1 µm base layer consists of a PECVD seed layer (+/− 75 nm), a CVD crystallization layer (+/− 135 nm) and a PECVD layer to achieve the required thickness with a high growth-rate. The top part of this PECVD layer can optionally be used for optimizing the stress gradient by a stress compensation layer. This approach resulted in 4 µm thick poly-SiGe MEMS structural layers with low tensile stress (50 MPa), low resistivity (2 mΩcm) and a low strain gradient (< 1*10−5/µm).

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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