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Sputter Deposition of CuInSe2 and CuGaSe2 from Composite Targets on (100) Si

Published online by Cambridge University Press:  31 January 2011

Okechukwu N. Akpa ,
Shaik Shoieb ,
Trenton R. Thompson ,
Tamara F. Isaacs-Smith ,
Philip Anderson ,
Supapan Seraphin  and
Kalyan K. Das
Okechukwu N. Akpa
Affiliation:
[email protected], Tuskegee University, Tuskegee Center for Advanced Materials, Tuskegee, Alabama, United States
Shaik Shoieb
Affiliation:
[email protected], Tuskegee University, Electrical Engineering, 36088, Alabama, United States
Trenton R. Thompson
Affiliation:
[email protected], Tuskegee University, Electrical Engineering, 36088, Alabama, United States
Tamara F. Isaacs-Smith
Affiliation:
[email protected], Auburn University, Space Research Institute, Auburn, Alabama, United States
Philip Anderson
Affiliation:
[email protected], University of Arizona, Material Science and Engineering, Tucson, Arizona, United States
Supapan Seraphin
Affiliation:
[email protected], University of Arizona, Material Science and Engineering, Tucson, Arizona, United States
Kalyan K. Das
Affiliation:
[email protected], Tuskegee University, Electrical Engineering, 36088, Alabama, United States
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Abstract

Thin films of CuInSe2 (CIS) and CuGaSe2 (CGS) were deposited on (100) Si substrates by RF magnetron sputtering using stoichiometric targets, at various substrate temperatures. Prior to film deposition, the Si substrates were cleaned using the RCA cleaning procedure and treated in a buffered oxide etch (BOE) solution. Deposited films were characterized using Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) of cross-sectional samples and Hall measurements. Rutherford backscattering analysis indicated that the CIS films had a composition of Cu0.8In1.1Se1.9, whereas CGS films were Cu-poor and Ga-rich with a composition of Cu0.3Ga1.5Se1.5. Clean Cu-chalcopyrite/Si interfaces were obtained using BOE treated Si substrates. Transmission electron micrographs of cross-sectional samples indicated a polycrystalline film structure and that the native oxide on the Si substrate was eliminated. Energy dispersive X-ray spectroscopy (EDS) conducted in the TEM showed that contamination levels in the films were low. The Hall-mobility experiments performed the CIS film indicated that the material was of p-type conductivity with a carrier concentration of 9.6 x 1020/cm3 and a Hall mobility of 390 cm2V-1s-1.

Keywords

CuHall effectIn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q03-25
Copyright
Copyright © Materials Research Society 2010

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References

1 Contreras, M.A. Ramanathan, K. AbuShama, J. Hasoon, F. Young, D.L. Egaas, B. Noufi, R. Prog. Photovolt: Res. Appl. 13 (2005) 209.Google Scholar
2 Siebentritt, S. Thin Solid Films 403-404 (2002) 1–8.Google Scholar
3 Thompson, Michael and Doolittle, Larry, RUMP - RBS Analysis and Simulation Package, Computer Graphic Service, Version 0.950 (2002).Google Scholar
4 Siebentritt, S. Rau, U. Wide-Gap Chalcopyrites. Springer. Berlin. (2006).Google Scholar
5 Rockett, A. J. Appl. Phys 70 (7) (1991).10.1063/1.349175Google Scholar