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Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

Published online by Cambridge University Press:  10 February 2011

Jennifer A. Hollingsworth ,
William E. Buhro ,
Aloysius F. Hepp ,
Philip P. Jenkins  and
Mark A. Stan
Jennifer A. Hollingsworth
Affiliation:
Dept. of Chemistry, Washington University, Box 1134, St. Louis, MO 63130
William E. Buhro
Affiliation:
Dept. of Chemistry, Washington University, Box 1134, St. Louis, MO 63130
Aloysius F. Hepp
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
Philip P. Jenkins
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
Mark A. Stan
Affiliation:
Photovoltaic Branch, NASA Lewis Research Center, MS 302–1, Cleveland, OH 44135
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Abstract

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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