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Spin Resonance Studies on free Electrons and Defects in Microcrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

C. Malten ,
F. Finger ,
P. Hapke ,
T. Kulessa ,
C. Walker ,
R. Carius ,
R. Flückiger  and
H. Wagner
C. Malten
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
F. Finger
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
P. Hapke
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
T. Kulessa
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
C. Walker
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Flückiger
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany Institut de Microtechnique, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
H. Wagner
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The effect of micro-doping, defect creation, and non-steady state occupation through optical transitions on the electron spin resonance signals found in undoped and weakly doped microcrystalline silicon with a high degree of crystallinity is investigated. The experimental results are in agreement with the assignment of the resonance at g=1.9983 to conduction electrons in the crystalline grains and the resonanccs around g=2.0052 to dangling bonds in the remaining amorphous phase and at the grain boundaries. The simultaneous presence of both resonances can result from a large conduction band offset between crystalline grains and grain boundaries or the amorphous phase. The presence of conduction electron spin resonance in compensated and even p-type material points also to potential fluctuations. Free electrons in interconnected crystalline grains are in agreement with the weakly activated transport found in µc-Si:H at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 757
Copyright
Copyright © Materials Research Society 1995

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References

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