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Spin Density in Thin Film Silicon Before and After Electron Bombardment

Published online by Cambridge University Press:  01 February 2011

Oleksandr Astakhov ,
Reinhard Carius ,
Yuri Petrusenko ,
Valeriy Borysenko ,
Dmitry Barankov  and
Friedhelm Finger
Oleksandr Astakhov
Affiliation:
[email protected], Forschungszentrum Juelich, IEF-5, Wilhelm-Johnen-Straße, Juelich, 52425, Germany, +492461613923, +492461613735
Reinhard Carius
Affiliation:
[email protected], Forschungszentrum Jülich, IEF-5, Jülich, 52425, Germany
Yuri Petrusenko
Affiliation:
[email protected], National Science Centre Kharkov Institute of Physics & Technology, Akademichna 1, Kharkov, 61108, Ukraine
Valeriy Borysenko
Affiliation:
[email protected], National Science Centre Kharkov Institute of Physics & Technology, Akademichna 1, Kharkov, 61108, Ukraine
Dmitry Barankov
Affiliation:
[email protected]>, National Science Centre Kharkov Institute of Physics & Technology, Akademichna 1, Kharkov, 61108, Ukraine
Friedhelm Finger
Affiliation:
[email protected], Forschungszentrum Jülich, IEF-5, Jülich, 52425, Germany
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Abstract

The defect density in thin film silicon was increased using low temperature 2MeV electron irradiation up to a factor of 1000. More than 30 samples of different structure from highly crystalline to amorphous were prepared with PECVD and irradiated to study the dynamics of defect accumulation and role of the material structure in this process.

Keywords

electron irradiationelectron spin resonanceSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A02-03
Copyright
Copyright © Materials Research Society 2007

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