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Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H

Published online by Cambridge University Press:  26 February 2011

Shu Jin  and
Lothar Ley
Shu Jin
Affiliation:
Institut für Technische Physik, Universität Erlangen, Erwin-Rommel-Str.1 D-8520 Erlangen, Germany
Lothar Ley
Affiliation:
Institut für Technische Physik, Universität Erlangen, Erwin-Rommel-Str.1 D-8520 Erlangen, Germany
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Abstract

Total yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 403
Copyright
Copyright © Materials Research Society 1991

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References

[1] Fritzsche, H., Tsai, C. C., and Persans, P., Solid State Technology 21, 55 (1978).Google Scholar
[2] Knights, J. C., Lucovsky, G., and Nemanich, R. J., J. Non-Cryst. Solids 32, 393 (1979).Google Scholar
[3] In this paper we use the term “polyhydride” to indicate all hydrogen bonding configurations in which more than one hydrogen atom is bonded to Si or Ge.Google Scholar
[4] Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).CrossRefGoogle Scholar
[5] Moustakas, T. D., Anderson, D. A., and Paul, W., Solid State Comm. 23, 155 (1977).CrossRefGoogle Scholar
[6] Parsons, G. D., Wang, C., Williams, M. J., and Lucovsky, G., J. Non-Cryst. Solids 114, 178 (1989).CrossRefGoogle Scholar
[7] Curtains, H. and Favre, M., in Advances in Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1988), p. 329.Google Scholar
[8] Winer, K. and Ley, L., as above, p. 365.Google Scholar
[9] Ley, L., in Semiconductors and Semimetals 21B, edited by Pankove, J. I., p. 385;Google Scholar
Yang, L., Abeles, B., Eberhardt, W., Sttarsiewski, H., and Sondericher, D., Phys. Rev. B 39, 3801 (1989).Google Scholar
[10] Sasaki, H., Deguchi, M., Sate, K., and Aiga, M., J. Non-Cryst. Solids 114, 672 (1989).Google Scholar
[11] Brodsky, M. H., in Topics in Applied Physics 36: Amorphous Semiconductors, edited by Brodsky, M. H. (Springer-Verlag, 1985), p. 1.CrossRefGoogle Scholar
[12] Theye, M. L., Gheorghiu, A., Driss-Khodja, K. and Boccara, C., J. Non-Cryst. Solids 77/78, 1293 (1985).Google Scholar
[13] Scott, B. A., Reimer, J. A., and Longeway, P. A., J. Appl. Phys. 54, 6853 (1983).Google Scholar
[14] Hata, N., Wagner, S., Roca i Cabarrocas, P., and Favre, M., to be published.Google Scholar