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Solution Growth and Characterization of Icosahedral Boron Arsenide (B12As2)

Published online by Cambridge University Press:  14 March 2011

C.E. Whiteley
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
Y. Zhang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY 11794, USA
A. Mayo
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506 USA.
Y. Gong
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY 11794, USA
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Abstract

The crystallographic properties of bulk icosahedral boron arsenide (B12As2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the boron in nickel at 1150°C for 48-72 hours, reacting with arsenic vapor, and slowly cooling to room temperature. The crystals varied in color from black and opaque to clear and transparent. Raman spectroscopy, x-ray topography (XRT), and defect selective etching revealed that the B12As2 single crystals were high quality with low dislocation densities. Furthermore, XRT results suggest that the major face of the plate-like crystals was (111) type, while (100), (010) and (001) type facets were also observed optically. The predominant defect in these crystals was edge character growth dislocations with a <001> Burgers vector, and <-110> line direction. In short, XRT characterization shows that solution growth is a viable method for producing good quality B12As2 crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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