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Solid State Amorphization in Silicide—Forming Systems

Published online by Cambridge University Press:  03 September 2012

L.J. Chen ,
W.Y. Hsieh ,
J.H. Lin ,
T.L. Lee ,
J.F. Chen ,
J.M. Liang  and
M.H. Wang
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
W.Y. Hsieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
J.H. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
T.L. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
J.F. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
J.M. Liang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
M.H. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
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Abstract

Solid phase amorphization has been found to occur in all refractory metal and a number of rare—earth and platinum group metal thin film on silicon systems. For Ti/Si, Zr/Si, Hf/Si, V/Si, Nb/Si and Ta/Si systems, the growth of amorphous interlayer (a—interlayer) was found to follow a linear law in the initial stage. Si atom was found to be the dominant diffusing species in the solid phase amorphization in Ti/Si, Zr/Si and Hf/Si systems. For the Y/Si system, the stability of amorphous interlayer depends critically on the composition of the amorphous films.

Auto–correlation function analysis was utilized to determine the structure of the amorphous interlayers. HRTEM in conjunction with the fast Fourier transform were applied to determine the first nucleated crystalline phase. Simultaneous presence of multiphases was observed to occur in a number of refractory metal/Si systems. Interesting electrical properties of amorphous interlayers were found for Ti/Si, Zr/Si and Hf/Si systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 343
Copyright
Copyright © Materials Research Society 1994

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References

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