Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T18:04:43.414Z Has data issue: false hasContentIssue false
  • English
  • Français

SOI Waveguide Optical Nonreciprocal Devices with Directly Bonded Garnet

Published online by Cambridge University Press:  22 March 2011

Tetsuya Mizumoto  and
Ryohei Takei
Tetsuya Mizumoto
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
Ryohei Takei
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
Get access

Abstract

Surface activated direct bonding of a magnetooptic garnet crystal to a Silicon-On-Insulator (SOI) wafer is discussed for the application to waveguide optical nonreciprocal devices. An interferometric waveguide isolator is discussed that uses nonreciprocal phase shift brought about by a first-order magneto-optic effect. In an SOI waveguide, the low refractive index of buried oxide layer enhances the magneto-optic phase shift. This contributes to reduce the device size together with the strong field confinement of high index contrast waveguide. The interferometric isolator can be extended to an optical circulator by adopting appropriate 3-dB directional couplers to construct a Mach-Zehnder interferometer.

Keywords

optoelectronicmagnetoopticSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1291: Symposium J – Integrated Nonreciprocal Photonics—Materials, Phenomena and Devices , 2011 , mrsf10-1291-j05-05
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mizumoto, T., The 210th Meeting of Electrochemical Society, Cancun, Mexico, 1258 (2006).Google Scholar
2. Takei, R., Abe, K., and Mizumoto, T., IEEE LEOS Annual Meeting, Lake Buena Vista, Florida, TuD4 (2007).Google Scholar
3. Yokoi, H., Mizumoto, T., Shinjo, N., Futakuchi, N., and Nakano, Y., Appl. Opt., 39, 6158–6164 (2000).Google Scholar
4. Shoji, Y., Mizumoto, T., Yokoi, H., Hsieh, I-Wei, and Osgood, Richard M. Jr., Appl. Phys. Lett., 92, 071117 (2008).Google Scholar
5. Takagi, H., Maeda, R., and Suga, T., J. Micromechanics and Micro- engineering, 11 (2001).Google Scholar
6. Suga, T., Kim, T. H., and Howlader, M. M. R., 2004 IEEE Electronic Components & Technology Conf. (ECTC), 484-490 (2004).Google Scholar
7. Takei, R., Yoshida, K., and Mizumoto, T., Jpn. J. Appl. Phys., 49, 086204 (2010).Google Scholar
8. Moriceau, H., Rieutord, F., Morales, C. and Charvet, A. M., Microsyst. Technol., 12, 378 (2006).Google Scholar
9. Ando, K., Okoshi, T., and Koshizuka, N., Appl. Phys. Lett., 53, 4–6 (1988).Google Scholar
10. Wang, S., Shah, M., and Crow, J. D., J. Appl. Phys., 43, 1861–1875 (1972).Google Scholar
11. Mizumoto, T., Kawaoka, Y., and Naito, Y., Trans. IECE Japan, E69, 968–972 (1986).Google Scholar
12. Takenaka, M. and Nakano, Y., Technical Digest of 11th International Conference on Indium Phosphide and Related Materials, Davos, Switzerland, TuA3–5 (1999).Google Scholar
13. Zaets, W. and Ando, K., IEEE Photon. Technol. Lett., 11, 1012–1014 (1999).Google Scholar
14. Vanwolleghem, M., Parys, W. V., Thourhout, D. V., Baets, R., Lelarge, F., Gauthier-Lafaye, O., Thedrez, B., Wirix-Speetjens, R., and Lagae, L., Appl. Phys. Lett., 85, 3980–3982 (2004).Google Scholar
15. Shimizu, H. and Nakano, Y., J. Lightwave Technol., 19, 1973–1975 (2007).Google Scholar
16. Auracher, F. and Witte, H. H., Opt. Commun., 13, 435–438 (1975).Google Scholar
17. Mizumoto, T., Oochi, K., Harada, T., and Naito, Y., J. Lightwave Technol., LT-4, 347-352 (1986).Google Scholar
18. Yokoi, H. and Mizumoto, T., Electron. Lett., 33, 1787–1788 (1997).Google Scholar
19. Shintaku, T. and Uno, T., J. Appl. Phys., 76, 8155–8159 (1994).Google Scholar
20. Yokoi, H., Mizumoto, T., and Shoji, Y., Appl. Opt., 42, 6605–6612 (2003).Google Scholar
21. Espinola, R. L., Izuhara, T., Tsai, M.-C., Osgood, R. M. Jr., and Dötsch, Horst, Opt. Lett., 29, 941–943 (2004).Google Scholar
22. Mizumoto, T., Chihara, H., Tokui, N., and Naito, Y., Electron. Lett., 26, 199–200 (1990).Google Scholar
23. Takei, R. and Mizumoto, T., Jpn. J. Appl. Phys., 49, 052203 (2010).Google Scholar