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Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta2O9 Films

Published online by Cambridge University Press:  11 February 2011

Eisuke Tokumitsu  and
Masahito Kishi
Eisuke Tokumitsu
Affiliation:
IT-21 Center, Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba-ku, Sendai 980–8577, Japan Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Masahito Kishi
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
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Abstract

We have characterized (Sr,Sm)Bi2Ta2O9 (SSBT) films fabricated by the sol-gel technique on Pt/Ti/SiO2/Si substrates. For ferroelectric-gate FET applications, a ferroelectric film which has a small remanent polarization and a relatively large coercive field is required. It is demonstrated that Sm doping in ferroelectric SBT films is effective to reduce the remanent polarization and enhance the coercive field. Sr0.5Sm0.2Bi2.2Ta2O9 films (150nm) crystallized at 850°C exhibits good electrical properties with a remanent polarization of 1.7 μC/cm2 and a coercive fields of 85 kV/cm. These values are suitable for ferroelectric-gate FET applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U7.2/T2.2
Copyright
Copyright © Materials Research Society 2003

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References

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