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Sintering of Silver Nanoparticles for the Formation of High Temperature Interconnect Joints

Published online by Cambridge University Press:  01 February 2011

A. J. Murray
Affiliation:
[email protected], University of Alberta, Electrical and Computer Engineering, 2nd Floor ECERF, 9107 - 116th street, Edmonton, Alberta, T6G 2V4, Canada
P. Jaroenapibal
Affiliation:
[email protected], University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, Pennsylvania, 19104.6272, United States
B. Koene
Affiliation:
[email protected], Luna Innovations, Blacksburg, Virginia, 24060, United States
S. Evoy
Affiliation:
[email protected], University of Alberta, Electrical and Computer Engineering, 2nd Floor ECERF, 9107 - 116th street, Edmonton, Alberta, T6G 2V4, Canada
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Abstract

We report the development of a metallic colloid sintering process enabling the creation of bonding layers at moderate temperatures ranging from 150°C to 300°C, and pressures lower than 5MPa. This colloidal n-propyl acetate dispersion of Ag nanoparticles, having an average size distribution of 103nm, was used in sintered interconnect fabrication. Open air sintering of a 10um thick film resulted in an average resistivity of 0.20·10−6 −0.30·10−6 Ωm. Film resistances were found to be as low as 0.18·10−6 Ωm. Independent test varying either pressure or temperature were correlated to ultimate shear strength and modulus. The analysis of a 1cm2 bond area resulted in a peak shear strength of 5.83 MPa and shear modulus of 346 MPa which occurred following bonding at 300°C with a pressure of 4.219 MPa.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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