Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-02T23:34:22.322Z Has data issue: false hasContentIssue false

Sintering of Silver Nanoparticles for the Formation of High Temperature Interconnect Joints

Published online by Cambridge University Press:  01 February 2011

A. J. Murray
Affiliation:
[email protected], University of Alberta, Electrical and Computer Engineering, 2nd Floor ECERF, 9107 - 116th street, Edmonton, Alberta, T6G 2V4, Canada
P. Jaroenapibal
Affiliation:
[email protected], University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, Pennsylvania, 19104.6272, United States
B. Koene
Affiliation:
[email protected], Luna Innovations, Blacksburg, Virginia, 24060, United States
S. Evoy
Affiliation:
[email protected], University of Alberta, Electrical and Computer Engineering, 2nd Floor ECERF, 9107 - 116th street, Edmonton, Alberta, T6G 2V4, Canada
Get access

Abstract

We report the development of a metallic colloid sintering process enabling the creation of bonding layers at moderate temperatures ranging from 150°C to 300°C, and pressures lower than 5MPa. This colloidal n-propyl acetate dispersion of Ag nanoparticles, having an average size distribution of 103nm, was used in sintered interconnect fabrication. Open air sintering of a 10um thick film resulted in an average resistivity of 0.20·10−6 −0.30·10−6 Ωm. Film resistances were found to be as low as 0.18·10−6 Ωm. Independent test varying either pressure or temperature were correlated to ultimate shear strength and modulus. The analysis of a 1cm2 bond area resulted in a peak shear strength of 5.83 MPa and shear modulus of 346 MPa which occurred following bonding at 300°C with a pressure of 4.219 MPa.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zhang, Z., and Lu, G. Q., IEEE Trans. on Elec. Pack. Man., 25, 279 (2002).Google Scholar
2 Lu, G. Q., Noel, J. N., Zhiye, Z., and Bai, J. G., in A Lead-Free, Low-Temperature Sintering Die-Attach Technique for High-Performance and High-Temperature Packaging. (Proc. IEEE CPMT Conf. on High Dens. Microsys. Design and Packag. and Comp. Fail. Anal., HDP'04, 2004), p 4246.Google Scholar
3 Schuler, C. Chr, Stuck, A., Beck, N., Keser, H., and Tack, U. J., J. Mater. Sci 11, 389 (2000).Google Scholar
4 Joo, S., Baldwin, D. F., Elec. Comp. and Tech. Conf. 2 1859 (2005).Google Scholar
5 Fuller, S. B., Wilhelm, E. J., and Jacobson, J. M., Micro, J.. Elec. Mech. Sys. 11, 54 (2002).Google Scholar
6 Chou, K.S, Huang, K.C, and Lee, H.H, Nanotechnology 16, 779 (2005).Google Scholar
7 Munamarty, R., McCluskey, P., Pecht, M., and Yip, L., Soldering Surf. Mount Technol. 8, 51 (1996).Google Scholar