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Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

Published online by Cambridge University Press:  01 February 2011

Koushik Banerjee ,
Shubhrangshu Mallick ,
Siddhartha Ghosh ,
Elena Plis ,
Jean Baptiste Rodriguez ,
Sanjay Krishna  and
Christoph Grein
Koushik Banerjee
Affiliation:
[email protected], University of Illinois at Chicago, Lab for Photonics and Magnetics (ECE), 1039 S.Racine Ave, Apt 2R, Chicago, IL, 60607, United States
Shubhrangshu Mallick
Affiliation:
[email protected], University of Illinois at Chicago, Lab for Photonics and Magnetics (ECE), Chicago, IL, 60607, United States
Siddhartha Ghosh
Affiliation:
[email protected], University of Illinois at Chicago, Lab for Photonics and Magnetics (ECE), Chicago, IL, 60607, United States
Elena Plis
Affiliation:
[email protected], University of New Mexico, Center for High Technology Materials (ECE), Albuquerque, NM, 87106, United States
Jean Baptiste Rodriguez
Affiliation:
[email protected], University of New Mexico, Center for High Technology Materials (ECE), Albuquerque, NM, 87106, United States
Sanjay Krishna
Affiliation:
[email protected], University of New Mexico, Center for High Technology Materials (ECE), Albuquerque, NM, 87106, United States
Christoph Grein
Affiliation:
[email protected], University of Illinois at Chicago, Microphysics Laboratory (Physics), Chicago, IL, 60607, United States
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Abstract

Mid-wavelength infrared (MWIR) avalanche photodiodes (APDs) were fabricated using Indium Arsenide- Gallium Antimonide (InAs-GaSb) based strain layer superlattice (SLS) structures. They were engineered specifically to have either electron or hole dominated ionization. The gain characteristics and the excess noise factors were measured for both devices. The electron dominated p+-n−-n APD with a cut-off wavelength of 4.13 μm at 77 K had a maximum multiplication gain of 1800 measured at -20 V while that of the hole dominated n+-p--p structure with a cut-off wavelength of 4.98 μm at 77 K was 21.1 at -5 V at 77 K. Excess noise factors were measured between 1-1.2 up to a gain of 800 and between 1-1.18 up to a gain of 7 for electron and hole dominated APDs respectively.

Keywords

optoelectronicdevicesIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1076: Symposium K – Materials and Devices for Laser Remote Sensing and Optical Communication , 2008 , 1076-K02-02
Copyright
Copyright © Materials Research Society 2008

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