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Single Asperity Wear and Stress-Assisted Dissolution of Copper

Published online by Cambridge University Press:  01 February 2011

Bun H Chua ,
Abhijit Chandra  and
Pranav Shrotriya
Bun H Chua
Affiliation:
[email protected], Iowa State University, Mechanical Engineering Department, 2025 Black Engineering Building, Ames, IA, 50011, United States
Abhijit Chandra
Affiliation:
[email protected], Iowa State University, Mechanical Engineering Department, 2025 Black Engineering Building, Ames, IA, 50011, United States
Pranav Shrotriya
Affiliation:
[email protected], Iowa State University, Mechanical Engineering Department, 2025 Black Engineering Building, Ames, IA, 50011, United States
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Abstract

The focus of this paper is to investigate the synergistic influence of contact loads, surface stress state and chemical environment on material removal during mechanical stimulation of copper surface. A unique setup is used to generate well characterized stress states on a polished copper specimen. Stressed surface of copper specimen is stimulated using tip of the atomic force microscope (AFM) and material removed during stimulation is measured as a function of contact loads, surface stress state and chemical environment. Measured material removal rates display a complex dependence on contact pressures and in-plane stress state which changes as the pH of chemical environment changes from acidic to basic. A surface material removal mechanism based on a single asperity wear and stress-assisted dissolution is proposed to explain the experimental observations

Keywords

Cusurface reactionCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1025: Symposium B – Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy , 2007 , 1025-B16-04
Copyright
Copyright © Materials Research Society 2008

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References

[1] Dejule, R., “fiCMP challenges below a quarter micron.”fl Semicond. Int.. p. 54–60, Nov. 1997.Google Scholar
[2] Preston, F.W., 1927, fiThe theory and design of plate glass polishing machine, J. Soc. Glass Technol., 11, No44, p. 214–256.Google Scholar
[3] Pourbaix, M., Atlas of Electrochemical Equilibria in Aqueous Solution, Pergamon Press, Cebelcor Brussels, 1966. p. 384–392.Google Scholar
[4] Yu, H.H., Suo, Z., Stress-dependent Surface Reactions and Implications for a Stress Measurement Technique, Journal of Applied Physics, 2000, 87 Google Scholar
[5] Carpio, R., Farkas, J. and Jairath, R., Initial Study on Copper CMP Slurry Chemistries, Thin Firm, 1995, 266, p. 238–244.Google Scholar
[6] Luo, W., Campbell, D.R., Babu, S.V., Chemical– Mechanical Polishing of Copper in Alkaline Media, Thin Solid Films, 1997, 311, p. 177–182.Google Scholar
[7] Steigerwald, S.P. Murarka, R.J., , Gutmann, Duquette, D.J., Chemical Processes in the Chemical Mechanical Polishing of Copper, Meterial Chemistry and Physics, 41, 1995,p.217–228 Google Scholar
[8] Vander Voort, G.F., Metallography Principle andPractice. ASM International, 1999.Google Scholar
[9] Tortones, M. and Kirk, M., Characterization of Application Specific Probes for SPMs.SPIE, 1997. 3009: p. 53–60.Google Scholar