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Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

Published online by Cambridge University Press:  25 February 2011

E. Chason ,
P. Bedrossian ,
J.Y. Tsao ,
B.W. Dodson  and
S.T. Picraux
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. Bedrossian
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J.Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B.W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S.T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 281
Copyright
Copyright © Materials Research Society 1992

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References

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