Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-24T10:50:49.634Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation Of Polycrystalline Silicon Growth By Pulsed Excimer Laser Annealing

Published online by Cambridge University Press:  10 February 2011

Toshio Kudo ,
Daiji Ichishima  and
Cheng-Guo Jin
Toshio Kudo
Affiliation:
Research & Development Center, Sumitomo Heavy Industries Ltd., 63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, JAPAN, [email protected]
Daiji Ichishima
Affiliation:
Research & Development Center, Sumitomo Heavy Industries Ltd., 63-30 Yuuhigaoka, Hiratsuka, Kanagawa 254-0806, JAPAN, [email protected]
Cheng-Guo Jin
Affiliation:
ACT Center, TIC Corporation, 2-9-30 Kitasaiwai, Nishiku, Yokohama, Kanagawa 220-0004, JAPAN
Get access

Abstract

The dynamic simulation of poly-Si film synthesis has been fulfilled by means of the overlapping irradiation of single- and double-pulsed XeCl excimer lasers shaped into the line beam. A novel model applied to the dynamic simulation is based on the homogeneous nucleation, and the growth and shrinkage velocity of Si grains. The results simulated with the single-pulsed XeCl excimer laser has reproduced the super lateral growth (SLG) phenomenon which occurs in the very narrow range of energy density (the near complete melt regime). The actual energy density dispersion within 5.3% allows us to visualize the multiformity of grain sizes in the cross sectional texture. Standing on the reproduction of the SLG phenomenon by the single-pulsed irradiation, we have obtained the practical knowledge of the growth process of larger grains by the double-pulsed irradiation. We intend that the first pulse has charge of completely melting and the second pulse has charge of adjusting the number of nuclei. The adjustment of the first pulse energy density rather than that of the second pulse energy density leads to the growth of huge columnar grains much larger than the thickness of the Si layer. For the double-pulsed irradiation, the influence of the worst energy density dispersion (each of double pulses has the same fluctuation as the single pulse) is much larger than that of the actual delay time jitter (within 2.5ns) in a sense of the multiformity of grain sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 617: Symposium J – Laser-Solid Interactionsfor Materials Processing , 2000 , J1.6
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Funaki, Y., NIKKEI MICRODEVICES, 2, 160 (1998) (in Japanese).Google Scholar
2 Ishihara, R. and Matsumura, M., IEEE Electron Dev. Lett. 31, 1956 (1995).Google Scholar
3 Nishitani, H. et al. , IDW‘98, ALCp-I (1998)Google Scholar
4 Yoneda, K., Mat. Res. Soc. Symp. Proc. 507, 47 (1998).Google Scholar
5 Ichishima, D. et al. (unpublished).Google Scholar
6 Lowndes, D. H. and Wood, R. F., Journal of Luminescence, 30, 395 (1985).Google Scholar
7 Stiffler, S. R., Evans, P. V. and Greer, A. L., Acta Metall. Mater., 40, 1617 (1992).Google Scholar
8 Galenko, P. K. and Zhuravlev, V. A., Physics of Dendrites (World Scientific, 1994) p. 114.Google Scholar
9 Im, J. S., Kim, H. J. and Thompson, M. O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar
10 Watanabe, H., Miki, H., Sugai, S., Kawasaki, K. and Kioka, T., Jpn. J. Appl. Phys. 33, 4491 (1994)Google Scholar
11 Thomson, M. O., Galvin, G. L., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Gullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar
12 Bachrach, B. Z., Winer, K., Boyce, J. B., Ready, S. E., Johnson, R. I., and Anderson, G. B., J. Electron. Mater. 19, 241 (1990).Google Scholar