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SIMULATION OF NANOSCALE ETCHING FOR NANOTUBE AND GRAPHENE DEVICES

Published online by Cambridge University Press:  24 May 2012

Koichi Kusakabe
Koichi Kusakabe*
Affiliation:
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan
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Abstract

In order to find an efficient method to etch nano-carbon materials by hydrogenation in a controlled manner, we have studied hydrogen-atom adsorption on various deformed nanotubes using computer simulations based on the density-functional theory. The nanotube with an atomic lack is compared to a deformed tube with the Stone-Wales defect and a twisted tube wall. Similar to the known experimental etching condition for graphene, an atomic lack is effective to accumulate hydrogen atoms around the defect. Compared to the flat graphene, however, nanotube walls with curvature allow on-top adsorption of a hydrogen atom and selectivity in the hydrogenated site becomes worse. To achieve a controlled etching process, usage of a tungsten tip which realizes focused hydrogenation is proposed for natotubes and curved graphene.

Keywords

adsorptionnanostructuresimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 21 - 24
Copyright
Copyright © Materials Research Society 2012

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References

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