Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T10:09:14.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation of Charge Transport in Disordered Assemblies of Metallic Nano-Islands: Application to Boron-Nitride Nanotubes Functionalized with Gold Quantum Dots

Published online by Cambridge University Press:  21 July 2014

John A. Jaszczak ,
Madhusudan A. Savaikar ,
Douglas R. Banyai ,
Boyi Hao ,
Dongyan Zhang ,
Paul L. Bergstrom ,
An-Ping Li ,
Juan-Carlos Idrobo  and
Yoke Khin Yap
John A. Jaszczak
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Madhusudan A. Savaikar
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Douglas R. Banyai
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Boyi Hao
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Dongyan Zhang
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Paul L. Bergstrom
Affiliation:
Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, MI 49931, USA.
An-Ping Li
Affiliation:
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Juan-Carlos Idrobo
Affiliation:
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Yoke Khin Yap
Affiliation:
Department of Physics, Michigan Technological University, Houghton, MI 49931, U.S.A.
Get access

Abstract

In this study, we investigate the charge-transport behavior in a disordered one-dimensional (1D) chain of metallic islands using the newly developed multi-island transport simulator (MITS) based on semi-classical tunneling theory and kinetic Monte Carlo simulation. The 1D chain is parameterized to model the experimentally-realized devices studied by Lee et al. [Advanced Materials25, 4544-4548 (2013)], which consists of nano-meter-sized gold islands randomly deposited on an insulating boron-nitride nanotube. These devices show semiconductorlike behavior without having semiconductor materials. The effects of disorder, device length, temperature, and source-drain bias voltage (VSD) on the current are examined. Preliminary results of random assemblies of gold nano-islands in two dimensions (2D) are also examined in light of the 1D results.

At T = 0 K and low source-drain bias voltages, the disordered 1D-chain device shows charge-transport characteristics with a well-defined Coulomb blockade (CB) and Coulomb staircase (CS) features that are manifestations of the nanometer size of the islands and their separations. In agreement with experimental observations, the CB and the blockade threshold voltage (Vth) at which the device begins to conduct increases linearly with increasing chain length. The CS structures are more pronounced in longer chains, but disappear at high VSD. Due to tunneling barrier suppression at high bias, the current-voltage characteristics for VSD > Vth follow a non-linear relationship. Smaller islands have a dominant effect on the CB and Vth due to capacitive effects. On the other hand, the wider junctions with their large tunneling resistances predominantly determine the overall device current. This study indicates that smaller islands with smaller inter-island spacings are better suited for practical applications. Temperature has minimal effects on high-bias current behavior, but the CB is diminished as Vth decreases with increasing temperature.

In 2D systems with sufficient disorder, our studies demonstrate the existence of a dominant conducting path (DCP) along which most of the current is conveyed, making the device effectively quasi-1-dimensional. The existence of a DCP is sensitive to the device structure, but can be robust with respect to changes in VSD.

Keywords

electrical propertiesdevicessimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1700: Symposium MM – Nanotubes and Related Nanostructures--2014 , 2014 , pp. 17 - 28
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ionescu, A. M., Riel, H., Nature 479, 329 (2011).CrossRefGoogle Scholar
Ferain, I., Colinge, C. A., Colinge, J. P., Nature 479, 310 (2011).10.1038/nature10676CrossRefGoogle Scholar
Sheng, P. & Abeles, B., Phys. Rev. Lett., 28, 34 (1972)CrossRefGoogle Scholar
Cordan, A. S., Goltzene, A., Herve, Y., Mejias, M., Vieu, C., and Launois, H., J. Appl. Phys. 84, 3756 (1998).CrossRefGoogle Scholar
Ray, V., Subramanian, R., Bhadrachalam, P., Ma, L. C., Kim, C., and Koh, S. J.. Nat. Nanotechnol. 3, 603 (2008).10.1038/nnano.2008.267CrossRefGoogle Scholar
Karre, P. S., Bergstrom, P. L., Mailick, G., and Karna, S. P., J. Appl. Phys. 102, 024316 (2007).CrossRefGoogle Scholar
Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., and Seki, K., IEEE Trans. Electron Devices 41, 1628 (1994).CrossRefGoogle Scholar
Knobel, R. G. and Cleland, A. N., Nature 424, 291 (2003).10.1038/nature01773CrossRefGoogle Scholar
Parthasarathy, R., Lin, X.-M., and Jaeger, H. M., Phys. Rev. Lett. 87, 186807 (2001).CrossRefGoogle Scholar
Savaikar, M. A., Banyai, D., Bergstrom, P. L., and Jaszczak, J. A.. (2013) Simulation of charge transport in multi-island tunneling devices: Application to disordered one-dimensional systems at low and high bias. J. Appl. Phys. 114, 114504–1-12.10.1063/1.4821224CrossRefGoogle Scholar
Lee, C. H., Savaikar, M. A., Wang, J. S., Hao, B. Y., Zhang, D. Y., Banyai, D., Jaszczak, J. A., and Yap, Y. K.. (2013) Room Temperature Tunneling Behaviors of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots. Advanced Materials 25, 4544–4548.10.1002/adma.201301339CrossRefGoogle ScholarPubMed
Bortz, A. B., Kalos, M. H., and Lebowitz, J. L., J. Comput. Phys. 17, 10 (1975).CrossRefGoogle Scholar
Kotrla, M., Comp. Phys. Comm. 97, 82 (1996).CrossRefGoogle Scholar
Likharev, K. K., Proc. IEEE. 87, 606 (1999).CrossRefGoogle Scholar
Wasshuber, C., Computational Single-Electronics (Springer Wien New York, 2001).CrossRefGoogle Scholar
Averin, D. V. and Likharev, K. K.. In: Mesoscopic Phenomena in Solids, ed. Altshuler, B. et al. . ( Elsevier, Amsterdam , 1991) p. 173.CrossRefGoogle Scholar
Simmons, J. G., J. Appl. Phys. 34, 1793 (1963).CrossRefGoogle Scholar
Pisler, E., and Adhikari, T., Physica Scipta. 2, 81 (1970).CrossRefGoogle Scholar
Lekner, J., J. Electrostatics 69, 11 (2011).10.1016/j.elstat.2010.10.002CrossRefGoogle Scholar
Cheam, D. D., Ph.D. dissertation. Michigan Technological University, Houghton, MI, 2009.Google Scholar
Quinn, A. J., Biancardo, M., Floyd, L., Belloni, M., Ashton, P. R., Preece, J. A., Bignozzi, C. A., and Redmond, G.. J. Mater. Chem. 15, 4402 (2005).CrossRefGoogle Scholar
Neugebauer, C. A. and Webb, M. B., J. App. Phys. 33, 74 (1962).CrossRefGoogle Scholar
Parthasarathy, R., Lin, X.-M., Elteto, K., Rosenbaum, T. F., and Jaeger, H. M., Phys. Rev. Lett. 92, 076801 (2004).CrossRefGoogle Scholar
Middleton, A. A. and Wingreen, N. S., Phys. Rev. Lett. 71, 3198 (1993).10.1103/PhysRevLett.71.3198CrossRefGoogle Scholar
Aleshin, A. N., Lee, H. J., Jhang, S. H., Kim, H. S., Akagi, K., and Park, Y. W., Phys. Rev. B 72, 153202 (2005).CrossRefGoogle Scholar
Rimberg, A. J., Ho, T. R., and Clarke, J., Phys. Rev. Lett. 74, 4714 (1995).CrossRefGoogle Scholar
Bezryadin, A., Westervelt, R. M., and Tinkham, M., Appl. Phys. Lett. 74, 2699 (1999).CrossRefGoogle Scholar
Deshpande, V. V., Brockrath, M., Glazman, L. I., and Yakoby, A., Nature 464, 209 (2010).10.1038/nature08918CrossRefGoogle Scholar