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A short review and Present Status of ZnO Nanoparticle Formation by Ion Implantation Combined with Thermal Oxidation

Published online by Cambridge University Press:  26 February 2011

Hiroshi Amekura ,
Oleg A Plaksin ,
Naoki Umeda ,
Yoshihiko Takeda ,
Naoki Kishimoto  and
Christoph Buchal
Hiroshi Amekura
Affiliation:
[email protected], National Institute for Materials Science, Nanomaterials Laboratory, 3-13 Sakura, Tsukuba, Ibaraki, 305-0003, Japan, +81-29-863-5479, +81-29-863-5599
Oleg A Plaksin
Affiliation:
[email protected], National Institute for Materials Science, Nanomaterials Laboratory, Japan
Naoki Umeda
Affiliation:
[email protected], National Institute for Materials Science, Nanomaterials Laboratory
Yoshihiko Takeda
Affiliation:
[email protected], National Institute for Materials Science, Nanomaterials Laboratory
Naoki Kishimoto
Affiliation:
[email protected], National Institute for Materials Science, Nanomaterials Laboratory
Christoph Buchal
Affiliation:
[email protected], Forschungszentrum, ISG1-IT, Germany
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Abstract

Recently many groups have started studies of formation of zinc-oxide (ZnO) nanoparticle (NP) in transparent insulators, such as silica glass, sapphire, etc, using ion implantation techniques. In the early half of this article, we shortly review recent activities of ZnO NP formation using ion implantation combined with thermal oxidation. Some groups succeeded but the others did not. Even if they succeeded in the formation of ZnO nanostructures, one reported that they were in the shape of thin film and another reported the NP form. Based on our recent experimental results, we point out the importance of the oxidation temperature and the peculiar shapes and depth profiles of ZnO formed.

Keywords

nanostructureion-beam processingZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO08-01
Copyright
Copyright © Materials Research Society 2006

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References

1 Ozgur, U., ALivov, Ya. I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S., Avrution, V., Cho, S.J., and Morkoc, H., J. Appl. Phys. 98, 041301 (2005).Google Scholar
2 Huang, M.H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R., and Yang, P., Science 292, 1897 (2001).Google Scholar
3 Wang, R.C., Liu, C.P., Huang, J.L., Chen, S.J., Tseng, Y.K., and Kung, S.C.. Appl. Phys. Lett. 87, 013110 (2005).Google Scholar
4 Cao, H., Zhao, Y.G., Ho, S.T., Seelig, E.W., Wang, Q.H., and Chang, R.P.H., Phys. Rev. Lett. 82, 2278 (1999).Google Scholar
5 Kawasaki, M., Ohtomo, A., Ohkubo, I., I., Koinuma, H., Tang, Z.K., Yu, P., Wong, G.K.L., Zhang, B.P., and Segawa, Y., Mater. Sci. and Eng. B 56, 239 (1998).Google Scholar
6 Amekura, H., Kono, K., Kishimoto, N., and Buchal, Ch., presented in the 14th International Conference on Ion Beam Modification of Materials (IBMM2004), Monterey, CA, September (2004), to be published in Nucl. Instr. and Meth. B (2005).Google Scholar
7 Amekura, H., Umeda, N., Sakuma, Y., Kishimoto, N., and Buchal, Ch., Appl. Phys. Lett. 87, 013109 (2005).Google Scholar
8 Chen, Jinli, Mu, R., Ueda, A., Wu, M.H., Tung, Y.S., Gu, Z., Henderson, D.O., White, C.W., Budai, J.D. and Zuhr, R.A., J. Vac. Sci. Technol. A 16, 1409 (1998).Google Scholar
9 White, C.W., Meldrum, A., Sonder, E., Budai, J.D., Zuhr, R.A., Withrow, S.P., and Henderson, D.O., Mat. Res. Soc. Symp. Proc. 540, 219 (1999).Google Scholar
10 Liu, Y.X., Liu, Y.C., Shen, D.Z., Zhong, G.Z., Fan, X.W., Kong, X.G., Mu, R., and Henderson, D.O., J. Cryst. Growth 240, 152 (2002).Google Scholar
11 Liu, Y.X., Liu, Y.C., Shao, C.L., and Mu, R., J. Phys. D: Appl. Phys. 37, 30215 (2004).Google Scholar
12 Lee, J.K., Tewell, C.R., Schulze, R.K., Nastasi, M., Hamby, D.W., Lucca, D.A., Jung, H.S., and Hong, K.S., Appl. Phys. Lett. 86, 183111 (2005).Google Scholar
13 Muntele, I., Muntele, C., Thevenard, P., and Ila, D., presented in the 14th International Conference on Surface Modification of Materiasls by Ion Beams (SMMIB'05), Kusadasi, Turkey, September 2005, to be published in Surf. Coating Tech. (2006).Google Scholar
14 Takahashi, K. (private communication).Google Scholar
15 Marques, C., Franco, N., Silva, R.C. da, McHargue, C., and Alves, E., presented in the 5th Iberian Vacuum Meeting (RIVA-5), Guimaraes, Portugal, September 2005.Google Scholar
16 Xiang, X., Zu, X.T., Sun, K., Zhu, S., and Wang, L.M., presented in the 13th International Conference on Radiation Effects in Insulators (REI-2005), Santa Fe, NM, August, 2005.Google Scholar
17 Amekura, H., Umeda, N., Yoshitake, M., Kono, K., Kishimoto, N., and Buchal, Ch., J. Cryst. Growth, to be published in February 2006.Google Scholar