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Semiconductor Nanostructures defined by self-organizing Polymers

Published online by Cambridge University Press:  01 February 2011

Michael Haupt ,
Stephan Miller ,
Andreas Ladenburger ,
Rolf Sauer ,
Klaus Thonke ,
Silke Riethmueller ,
Martin Moeller  and
Florian Banhart
Michael Haupt
Affiliation:
Abt. Halbleiterphysik (Dept. of Semiconductor)
Stephan Miller
Affiliation:
Abt. Halbleiterphysik (Dept. of Semiconductor)
Andreas Ladenburger
Affiliation:
Abt. Halbleiterphysik (Dept. of Semiconductor)
Rolf Sauer
Affiliation:
Abt. Halbleiterphysik (Dept. of Semiconductor)
Klaus Thonke
Affiliation:
Abt. Halbleiterphysik (Dept. of Semiconductor)
Silke Riethmueller
Affiliation:
Abt. Makromolekulare Chemie III (Dept. of Organic and Macromolecular Chemistry III)
Martin Moeller
Affiliation:
Abt. Makromolekulare Chemie III (Dept. of Organic and Macromolecular Chemistry III)
Florian Banhart
Affiliation:
Zentrale Einrichtung Elektronenmikroskopie (Dept. of Electron Microscopy)University Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany
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Abstract

In the near future it will be more and more important to produce real nanometer-sized structures for semiconductor devices (e.g., quantum dot lasers) but also for nano-biomechanical applications like the so-called total analysis system implemented on one chip.

We describe here a technique to create nanometer-sized structures in semiconductors and metals by the use of self-assembling diblock copolymers as nano-lithographic masks. Semiconductor quantum structures with very high aspect ratio of 1:10 were fabricated from III-V semiconductor heterostructures by anisotropic dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noblemetal salt. With a “Langmuir Blodgett” technique we can decorate complete wafers with a monolayer of highly ordered micelles, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of ~12 nm size remain. This metal cluster mask can be used directly in a highly anisotropic chlorine dry etching process to etch cylinders in GaAs and its In and Al alloys. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots.

By evaporating metals and applying a wet chemical image reversal process, we can invert the etched structure and generate a gauzy gold film with nano-holes inside. It is thinkable to use this porous gold film as a nano-filter in upcoming nano-biotechnology applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 728: Symposium S – Functional Nanostructured Materials through Multiscale Assembly and Novel Patterning Techniques , 2002 , S3.10
Copyright
Copyright © Materials Research Society 2002

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