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Semiconductor Film Bonding Technology and Application in Two-axis Hall Sensor Fabrication

Published online by Cambridge University Press:  01 February 2011

Keishin Koh ,
Takashi Matushita  and
Koji Hohkawa
Keishin Koh
Affiliation:
[email protected], Kanagawa Institute of Technology, Dept. of Electrical and Electronic Engineering, 1030 Shimo-Ogino, Atsugi, 243-0929, Japan
Takashi Matushita
Affiliation:
[email protected], Kanagawa Institute of Technology, Atsugi, 243-0292, Japan
Koji Hohkawa
Affiliation:
[email protected], Kanagawa Institute of Technology, Atsugi, 243-0292, Japan
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Abstract

We study basic problems of the semiconductor film bonding technology. We propose a new releasing method for a large number of semiconductor films using the film photoresist to protect the semiconductor films. We investigated the basic process conditions. We successfully released a large number of the GaAs film and bonded them on the Si, LiNbO3 substrates and metal Au surface. We estimated the ctystallinity of semiconductor films by X-ray diffraction and Raman spectral. The results clarified that these process were effective. As an application of the semiconductor film bonding technology, we fabricated a two-axis Hall sensor with planar structure. The two-axis hall sensor can measure axial and radial magnetic filed components (Bx and Bz) with a sensitivity of about 9.2 Ω/G for Bz and 4.5 Ω/G for Bx respectively.

Keywords

filmbondingsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N09-03
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Yadlonovitch, E., Gmitter, T., Harbison, J. P. and Bhat, R., Appl. Phys. Lett.. 50. 2222–2224 (1987).Google Scholar
2. Ersen, A., Schniter, I., Yadlonovitch, E. and Gmitter, T., Solid-State Electronics. 36, 1731–1739 (1993)Google Scholar
3. Bhattacharya, D., Bal, P. S., Fetterman, H. R., Streit, D. IEEE Photon. Techno Lett. 7, 1171–1173 (1995).Google Scholar
4. Hohkawa, K., Suzuki, H., Koh, K. and Noge, S., Jpn. J. Appl. Phys. 39. 1554–1558 (1997)Google Scholar
5. Camperi-Ginestet, C., Hargis, M., Jokerst, N. and Alln, M., IEEE Trans. Photo. Tech. Lett. 3, 1123–1126 (1991)Google Scholar
6. Hong, C., Koh, K., Kanashiro, C., Aoki, Y. and Hohkawa, K., Jpn. J. Appl. Phys. 39. 3666–3670 (2000)Google Scholar
7. Popovic, R. S., Hall effect devices, Bristol and Philadelphia, IoP, ch. 5 (2004)Google Scholar
8. Tamegai, T., Iye, Y., Oguro and Kishio, K., Physica C, 213, 33–42 (1993)Google Scholar
9. Shimohata, K., Yokoyama, S., Inaguchi, T., Hakamura, S. and Ozawa, Y., Cryogenics, 43, 111–116 (2003).Google Scholar