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Selective Seeding and Growth of Nanocrystalline CVD Diamond on Non-Diamond Substrates

Published online by Cambridge University Press:  30 June 2011

P. Pobedinskas
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
S.D. Janssens
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
J. Hernando
Affiliation:
Universidad de Castilla La Mancha, Departamento de Ingeniería Eléctrica, Electrónica, Automática y Comunicaciones, E.T.S.I. Industriales, Ciudad Real, Spain
P. Wagner
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, IMOMEC, Diepenbeek, Belgium
M. Nesládek
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, IMOMEC, Diepenbeek, Belgium
K. Haenen
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, IMOMEC, Diepenbeek, Belgium
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Abstract

A study is presented on nanocrystalline diamond (NCD) growth on different substrates, including silicon with and without different metallic interlayers, on aluminum nitride (AlN), and on a Si/AlN-based cantilever. It is shown that non-diamond substrate treatment prior to NCD growth is important for achieving high nucleation densities. AFM measurements reveal that an additional Si surface pretreatment with hydrogen plasma increases the nucleation density by a factor of four. A similar effect was indirectly demonstrated with acidic pretreatment of AlN. In both cases it is believed that the surface roughening is the key factor for explaining this phenomenon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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