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Selective Epitaxial Growth Followed by in Situ Deposition of a- or Poly-Si for Seeded Soi.

Published online by Cambridge University Press:  28 February 2011

L. Karapiperis ,
G. Garry  and
D. Dieumegard
L. Karapiperis
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
G. Garry
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
D. Dieumegard
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
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Abstract

Selective Epitaxial Growth (SEG) techniques find a growing number of applications in the field of Si IC's, such as, lateral isolation, vertical interconnects, seeded recrystallisation etc. In the present work, the use of Si SEG by CVD combined with in-situ deposition of a- or poly-Si for the improvement of SOI obtained by Zone Melting Recrystallisation (ZMR) or by Lateral Solid Phase Epitaxy (SPE) is described. The principle application for which the present work is intended is Three Dimentional (3D) Integration. One of the main constraints imposed on process is thermal compatibility with previously executed process steps. Hence the need to reduce the thermal budget for the Selective Epitaxial Growth as much as possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 231
Copyright
Copyright © Materials Research Society 1988

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References

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