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Selective Crystallization of A-Si:H Films onGlass

Published online by Cambridge University Press:  15 February 2011

Aiguo Yin  and
Stephen J. Fonash
Aiguo Yin
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
Stephen J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
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Abstract

We have found that an oxygen plasma exposure of a-Si:H films can cause thesefilms to crystallize with a much lower thermal-budget than that required forthe same a-Si:H films without this plasma exposure. Based on this uniquefinding, a selective area crystallization process has been developed tosuccessfully form patterned polycrystalline Si films. In this study, 1500 ÅPECVD a-Si:H films were first covered by 500 Å sputtered SiO2which was then patterned by lithography to form various islands covered bythe SiO2. These patterned films were exposed to an oxygen plasmaand were then thermally annealed in a furnace at 600 °C for 6 hours. Afterthis annealing it was found that the islands covered by SiO2during the oxygen plasma treatment remained a-Si while the oxygen plasmaexposed regions were crystallized completely. Both XRD and TEM were used toestablish the existance of these controlled regions of a-Si and poly-Si inthese films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 683
Copyright
Copyright © Materials Research Society 1994

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References

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