Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-24T14:07:35.234Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission

Published online by Cambridge University Press:  31 January 2011

Wen Feng ,
Vladimir Kuryatkov ,
Dana Rosenbladt ,
Nenad Stojanovic ,
Mahesh Pandikunta ,
Sergey A Nikishin  and
Mark Holtz
Wen Feng
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Vladimir Kuryatkov
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Dana Rosenbladt
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Nenad Stojanovic
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Mahesh Pandikunta
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Sergey A Nikishin
Affiliation:
[email protected], United States
Mark Holtz
Affiliation:
[email protected], Texas Tech University, Lubbock, Texas, United States
Get access

Abstract

We report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the <11-20> direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Keywords

nitridevapor phase epitaxy (VPE)optical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I01-04
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Feng, W., Pan, J.Q., Yang, H., Hou, L.P., Zhou, F., Zhao, L.J., Zhu, H.L., Wang, W., J. Phys. D 39, 2330 (2006).Google Scholar
[2] Zheleva, T.S., Nam, O.H., Ashmawi, W.M., Griffin, J.D., Davis, R.F., J. Cryst. Growth 222, 706 (2001).Google Scholar
[3] Choi, H.W., Jeon, C.W., Liu, C., Watson, I.M., Dawson, M.D., Edwards, P.R., Martin, R.W., Tripathy, S., Chua, S.J., Appl. Phys. Lett. 86, 021101 (2005).10.1063/1.1849439Google Scholar
[4] Feneberg, M., Thonke, K., J. Phys.: Condens. Matter 19, 403201 (2007).Google Scholar
[5] Feng, W., Kuryatkov, V.V., Chandolu, A., Song, D.Y., Pandikunta, M., Nikishin, S.A., Holtz, M., J. Appl. Phys. 104, (2008).Google Scholar
[6] Feng, W., Kuryatkov, V.V., Rosenbladt, D.M., Stojanovic, N., Nikishin, S.A., Holtz, M., J. Appl. Phys. 105, (2009).Google Scholar
[7] Paszkiewicz, R., Optica Applicata 32, 503 (2002).Google Scholar
[8] Ueda, M., Kondou, T., Hayashi, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T., Appl. Phys. Lett. 90, 171907 (2007).10.1063/1.2731526Google Scholar