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Segmented Amorphous Silicon n-i-p Photodiodes on Stainless-Steel Foils for Flexible Imaging Arrays

Published online by Cambridge University Press:  01 February 2011

Yuriy Vygranenko ,
R. Kerr ,
K. H. Kim ,
J. H. Chang ,
D. Striakhilev ,
A. Nathan ,
G. Heiler  and
T. Tredwell
Yuriy Vygranenko
Affiliation:
[email protected], University of Waterloo, E&CE, 200 University Ave West, Waterloo, N2L 3G1, Canada
R. Kerr
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14650-23487, United States
K. H. Kim
Affiliation:
[email protected], University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
J. H. Chang
Affiliation:
[email protected], University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
D. Striakhilev
Affiliation:
[email protected], University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
A. Nathan
Affiliation:
[email protected], University of Waterloo, Dept. of Electrical and Computer Engineering, 200 University Ave West, Waterloo, N2L 3G1, Canada
G. Heiler
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14650-23487, United States
T. Tredwell
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14650-23487, United States
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Abstract

This paper reports the first successful attempt to fabricate amorphous silicon (a-Si:H) n-i-p photodiodes on a thin stainless-steel foil substrate for medical X-ray imaging applications. Two architectures of the n-i-p-photosensor, where the top electrode is based on amorphous or polycrystalline ITO, have been developed and characterized. The impact of critical fabrication steps including the deposition of semiconductor layers, dry etch of the NIP stack, diode passivation and encapsulation, as well as a contact formation on the device performance is presented and discussed. The test structures comprising segmented photodiodes with an active area ranged from 0.126 × 0.126 to 1 × 1 mm2 have been fabricated on stainless-steel foils and on glass substrates for the purposes of process characterization. The fabricated samples are evaluated in terms of current-voltage, capacitance-voltage, and spectral response characteristics.

Keywords

sensoramorphousplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A12-02
Copyright
Copyright © Materials Research Society 2007

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