Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T06:36:04.012Z Has data issue: false hasContentIssue false
  • English
  • Français

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

Published online by Cambridge University Press:  05 June 2013

Yiting Sun ,
Elisabeth Levrau ,
Michiel Blauw ,
Johan Meersschaut ,
Patrick Verdonck ,
Herbert Struyf ,
Christophe Detavernier ,
Mikhail Baklanov ,
Steven De Feyter  and
Silvia Armini
Yiting Sun
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium KU Leuven, Department of Chemistry, Celestijnenlaan 200f, 3001 Heverlee
Elisabeth Levrau
Affiliation:
Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281 (S1), Ghent 9000, Belgium
Michiel Blauw
Affiliation:
imec-NL, Holst center, Eindhoven, The Netherlands
Johan Meersschaut
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Patrick Verdonck
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Herbert Struyf
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Christophe Detavernier
Affiliation:
Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281 (S1), Ghent 9000, Belgium
Mikhail Baklanov
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Steven De Feyter
Affiliation:
KU Leuven, Department of Chemistry, Celestijnenlaan 200f, 3001 Heverlee
Silvia Armini
Affiliation:
imec, Kapeldreef 75, B-3001, Leuven, Belgium
Get access

Abstract

In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

Keywords

dielectricbarrier layerporosity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa05-22
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., and Yanovitskaya, Z. S., J. Appl. Phys. 93, 8793 (2003)CrossRefGoogle Scholar
Thomas, M.E., Smith, D.M., Wallace, S., and Iwamoto, N., Proc. Inter. Interconnect Technol. Conf. (IITC)p. 223 (2002)Google Scholar
Besling, W., .Satta, A, .Schuhmacher, J, Ahell, T., .Suteliffe, V, Hoyas, A-M., Beyer, G., Gravesteijn, D. and Maex, K.. IITC p. 288–291 (2002)Google Scholar
Shoeb, J. and Kushner, M.J., J. Vac. Sci. Technol. A 29, 5 (2011)CrossRefGoogle Scholar
Whelan, C.M., Le, Q.T., Cecchet, F., Satta, A., Pireaux, J., Rudolf, P., and Maex, K., ECS Solid State Letters 7, 2 (2004); materials for information technology, engineering materials and processes, 69-76(2005) Google Scholar
Kimura, Y., paper presented at IEEE International Interconnect Technology Conference (IITC), San Jose, California, US, June 04–06 (2012)Google Scholar
Goethals, F., Baklanov, M.R., Ciofi, I., Detavernier, C., Van Dervoorta, P., and Van Driessche, I., Chem.. comm. 48, 22, p. 2797–2799 (2012)CrossRefGoogle Scholar
Armini, S., Prado, J.L., Swerts, J., Sun, Y., Krishtab, M., Meersschaut, J., Blauw, M., Baklanov, M., and Verdonck, P., ECS Solid State Letters 1, 2, p. 42–44 (2012)CrossRefGoogle Scholar
Arkles, B., Chemtech, 7, 766 (1977)Google Scholar
Sun, Y., Swerts, J., Verdonck, P., Maheshwari, A., Prado, J.L., De Feyter, S., and Armini, S., Solid State Phenomena, 195, p. 146–149 (2012)CrossRefGoogle Scholar
Killampalli, A.S., Ma, P.F., and Engstrom, J.R., J. Am. Chem. Soc. 127, p. 6300–6310 (2005)CrossRefGoogle Scholar
Urbanowicz, A.M., Vanstreels, K., Verdonck, P., Van Besien, E., Trompoukis, C., Shamiryan, D., De Gendt, S., and Baklanov, M. R., J. Vac. Sci. Technol. B 29, 3, 032201 (2011)CrossRefGoogle Scholar
Baklanov, M. R., et al. . Microelec. Eng. 64, 335 (2002); J. Vac. Sci. Technol. B 18, 1385(2000) CrossRefGoogle Scholar
Musschoot, J., Xie, Q., Deduytsche, D., Van den Berghe, S., Van Meirhaeghe, R.L., and Detavernier, C., Microelec. Eng. 86, 1, p. 72–77 (2009)CrossRefGoogle Scholar