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“Scratching” Carbon Nanotubes onto Si Substrates<B>

Published online by Cambridge University Press:  01 February 2011

Jun Yu
Affiliation:
[email protected] Australian National UniversityDepartment of Electronic Materials Engineering, Research School of Physical Sciences and EngineeringCanberra ACT 0200Australia
Ying Chen
Affiliation:
[email protected], The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra, ACT, 0200, Australia
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Abstract

Large-scale, high-density, and patterned carbon nanotubes (CNTs) on both pure Si and quartz (SiO2) substrates have been produced using different approaches. The CNTs were synthesized by pyrolysis of the ball-milled iron phthalocyanine (FePc) in a tube furnace under a Ar-5% H2 gas flow. Because patterned CNTs are difficult to grow directly on smooth and perfect single-crystalline Si wafer surface, mechanical scratches were created to help the selective deposition and growth of CNTs on the scratched areas. This simple process does not require pre-deposition of any metal catalysts. For SiO2 substrates, which can be readily covered by a CNT film, patterned CNTs are produced using a TEM grid as mask to cover the areas where CNTs are not needed. The growth temperature and vapor density have strong influence on the patterned CNT formation. The scratch areas with a special structure and a higher surface energy help the selective nucleation of CNTs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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