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Schottky Contact Behaviour as a Function of Metal and ZnO Surface Polarity

Published online by Cambridge University Press:  01 February 2011

M.W. Allen
Affiliation:
[email protected], University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch 8020, New Zealand
P. Miller
Affiliation:
[email protected], University of Canterbury, Dept. of Physics, Christchurch, 8020, New Zealand
J.B. Metson
Affiliation:
[email protected], University of Auckland, Dept. of Chemistry, Auckland, New Zealand
R.J. Reeves
Affiliation:
[email protected], University of Canterbury, Dept. of Physics, Christchurch, 8020, New Zealand
M.M. Alkaisi
Affiliation:
[email protected], University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch, 8020, New Zealand
S.M. Durbin
Affiliation:
[email protected], University of Canterbury, Dept. of Electrical & Computer Eng, Christchurch, 8020, New Zealand
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Abstract

Hall effect, photoluminescence (PL) and Schottky diode measurements were made on the Zn-polar , O-polar and m-plane faces of hydrothermally grown, bulk ZnO. Several polarity related differences were observed in the PL spectra. The most noticeable was increased emission from free excitons and from a triplet of emissions at 3.3725 - 3.3750 eV on the Zn-polar face. Polarity effects were also observed in the properties of highly rectifying, planar, silver oxide diodes fabricated by RF sputtering using an Ag target and an Ar/O2 plasma. The most significant of these was a consistent 130 meV larger barrier height for silver oxide diodes on the Zn-polar face compared to the O-polar face. These polarity effects are thought to result from the internal compensation of bound spontaneous polarization charges at the Zn-polar and O-polar faces. In addition, Au and Ag Schottky diodes with image-force-controlled ideality factors were achieved on the Zn-polar face of bulk ZnO without any special surface treatments.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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