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Schottky Barrier Heights of Tantalum Oxide, Barium Strontium Titanate, Lead Zirconate Titanate and Strontium Bismuth Tantalate

Published online by Cambridge University Press:  10 February 2011

J Robertson  and
C W Chen
J Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
C W Chen
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK
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Abstract

Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 – 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 443
Copyright
Copyright © Materials Research Society 1999

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References

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