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Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

Published online by Cambridge University Press:  26 February 2011

R. T. Tung
R. T. Tung*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Electrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 345
Copyright
Copyright © Materials Research Society 1985

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