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Rutherford Backscattering Spectrometry Analysis of Shallow Sb-Implanted Si

Published online by Cambridge University Press:  26 February 2011

Mark C. Ridgway ,
J. L. Whitton ,
P. J. Scanlon  and
A. A. Naem
Mark C. Ridgway
Affiliation:
Physics Department, Queen's University, Kingston, Ontario, Canada
J. L. Whitton
Affiliation:
Physics Department, Queen's University, Kingston, Ontario, Canada
P. J. Scanlon
Affiliation:
Physics Department, Queen's University, Kingston, Ontario, Canada
A. A. Naem
Affiliation:
Northern Telecom Electronics Limited, Ottawa, Ontario, Canada
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Abstract

Rapid thermal annealing (RTA) of shallow Sb-implanted Si has been studied with Rutherford Backscattering Spectrometry (RBS). Single crystal Si wafers were implanted with Sb at energies of 16, 32 and 48 keV and doses of 5×1014 and 1×1015/cm2. RTA and reference furnace anneals in a nitrogen atmosphere were done to activate the dopant and remove implantation damage. Glancing-angle RBS measurements were used to determine the Sb depth distributions. Dopant profiles obtained with RBS analysis were compared with Secondary Ion Mass Spectrometry results and TRIM code calculations. RBS measurements of the projected range and range straggle did not differ significantly from TRIM code calculations. Following annealing, significant Sb diffusion from the as-implanted peak was apparent. Sb accumulation at the substrate surface was pronounced, especially for furnace-annealed samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 283
Copyright
Copyright © Materials Research Society 1988

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References

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