Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-02T20:01:27.241Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon

Published online by Cambridge University Press:  28 February 2011

A. S. Oates ,
R. C. Newman ,
J. M. Tucker ,
G. Davies  and
E. C. Lightowlers
A. S. Oates
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K. Current address: A.T. & T. Bell Laboratories, Allentown, Penn.18103.
R. C. Newman
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K.
J. M. Tucker
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Whiteknights, Reading RG6 2AF, U.K.
G. Davies
Affiliation:
Physics Department, King's College, Strand, London WC2R 2LS, U.K.
E. C. Lightowlers
Affiliation:
Physics Department, King's College, Strand, London WC2R 2LS, U.K.
Get access

Abstract

Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 59
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mikkelsen, J., App. Phys. Lett. 39,.410 (1981).Google Scholar
2. Benton, J.L., Kimerling, L.C. and Stavola, M., Proc. Int. Conf. on Defects in Semiconductors 12, (Amsterdam: North-Holland) p.271 (1983).Google Scholar
3. Newman, R.C., Tucker, J.H. and Livingston, F.M., J. Phys. C16, L152 (1983).Google Scholar
4. Stavola, M., Patel, J.R., Kimerling, L.C. and Freeland, P.E., App. Phys. Lett. 42, 73 (1983).CrossRefGoogle Scholar
5. Newman, R.C., Tipping, A.K. and Tucker, J.H., J. Phys. C18, L861 (1985).Google Scholar
6. Bourret, A., Proc. 13th Int. Conf. on Defects in Semiconductors (Warrendale, Penn.: Metallurgical Soc. of AIME) p.129 (1985).Google Scholar
7. Newman, R.C., J. Phys. C18, L967 (1985).Google Scholar
8. Pfleuger, R., Corelli, J.C. and Corbett, J.A., Phys. Stat. Sol. (a) 91, K49 (1985).Google Scholar
9. Davies, G., Oates, A.S., Newman, R.C., Woolley, R., Lightowlers, E.C., Binns, M.J. and Wilkes, J.G., J. Phys. C in press.Google Scholar
10. O'Donnell, K.P., Lee, K.M. and Watkins, G.D., Physica 116B, 258 (1983).Google Scholar
11. Watkins, G.D., Phys. Rev. B12, 4383 (1975).Google Scholar
12. Corbett, J.W. and Watkins, G.D., Phys. Rev. 138, A555 (1965).Google Scholar
13. Oates, A.S., Newman, R.C. and Tucker, J.H., Proc. 13th Int. Conf. on Defects in Semiconductors (Warrendale, Penn.: Metallurgical Society of AIME) p.709, (1985).Google Scholar
14. Oates, A.S., Binns, M.J., Newman, R.C., Tucker, J.H., Wilkes, J.G. and Wilkinson, A., J. Phys. C17, 5695 (1984).Google Scholar
15. Brelot, A. and Charlemagne, J., Radiat. Effects 9, 65 (1971).Google Scholar