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The Role of the Si-SiO2 (CVD) Interface in Degradation Effects for High-Speed Bipolar Transistors

Published online by Cambridge University Press:  26 February 2011

J.-Q. Lü ,
S. Schöttl ,
E. Stefanov ,
F. Koch ,
R. Mahnkopf  and
H. Klose
J.-Q. Lü
Affiliation:
Physik-Dept. E16, Technical University Munich, D-85747 Garching, Germany
S. Schöttl
Affiliation:
Physik-Dept. E16, Technical University Munich, D-85747 Garching, Germany
E. Stefanov
Affiliation:
Physik-Dept. E16, Technical University Munich, D-85747 Garching, Germany
F. Koch
Affiliation:
Physik-Dept. E16, Technical University Munich, D-85747 Garching, Germany
R. Mahnkopf
Affiliation:
Siemens AG, Corporate R&D, D-81730 Munich, Germany
H. Klose
Affiliation:
Siemens AG, Corporate R&D, D-81730 Munich, Germany
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Abstract

The intent of the present work is to analyze device degradation and reliability in terms of their microscopic origins. The base-emitter junction of the advanced, “double-poly”, self-aligned bipolar transistor contacts the SiO2 sidewall spacer. During normal circuit operation, the base-emitter junction experiences a reverse bias which as a stress in time degrades the current gain of the transistor. Both a decrease of the gain, as well as an increase in the noise are observed. The forward base current increase as a function of stress time follows △IB ∼ tn. We present evidence that the defects are occurring at the Si-Si02 interface from perimeter to area comparisons. The weak temperature dependence of the forward base current in degraded transistors shows that trap-assisted tunneling current through the Si-SiO2 interface states is involved. The random-telegraph-signals observed for the first time in a silicon bipolar transistor are a direct identification of damage at the Si-SiO2 interface. 2D simulation of the potential and field near the interface allows us to show that damage can be expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 743
Copyright
Copyright © Materials Research Society 1995

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